AO4710 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D Bottom View D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D G G S S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current AF VGS TA=25°C Maximum 30 Units V ±12 V 12.7 TA=70°C A IDSM 10 Pulsed Drain Current B IDM 60 A Avalanche Current C IAR 22 A EAR 73 mJ Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C 3.1 PDSM TA=70°C TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 2.0 RθJA RθJL Typ 32 60 17 °C Max 40 75 24 Units °C/W °C/W °C/W www.aosmd.com AO4710 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=1mA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 60 TJ=125°C VGS=10V, ID=12.7A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=11A gFS Forward Transconductance VDS=5V, ID=12.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Max Units 0.02 0.1 6 20 0.1 µA 1.9 2.3 V 9.8 11.8 15.2 19.0 11.7 14.2 mΩ 0.5 V 5 A 30 VDS=30V, VGS=0V IDSS ID(ON) Typ V A mΩ 78 0.38 1980 VGS=0V, VDS=15V, f=1MHz mA S 2376 pF 317 pF 111 pF 1.3 2.0 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 33 43 nC Qg(4.5V) Total Gate Charge 15.0 20 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=12.7A Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr Body Diode Reverse Recovery Charge IF=12.7A, dI/dt=300A/µs Body Diode Reverse Recovery Time 5.3 nC 6.0 nC 5.5 ns VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω 5.5 ns 27.0 ns 4.3 ns IF=12.7A, dI/dt=300A/µs 11.2 13 7 ns nC A: The value of RθJA is measured withthe device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev4:Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 30 10V 80 VDS=5V 25 6V 4.5V 20 ID(A) ID (A) 60 15 40 10 VGS=3.5V 20 5 0 125° 0 0 1 2 3 4 5 1 1.5 VDS (Volts) 15 2.5 3 3.5 4 Normalized On-Resistance 2 VGS=4.5V RDS(ON) (mΩ ) 2 VGS(Volts) Figure 2: Transfer Characteristics DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 12 9 VGS=10V 6 VGS=10V ID=12.7A 1.8 1.6 VGS=4.5V 1.4 ID=11A 1.2 1 0.8 0 5 10 15 20 25 30 0 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+02 1.0E+01 ID=12.7A 25 125°C 1.0E+00 125°C 20 IS (A) RDS(ON) (mΩ ) 25°C 15 25°C 1.0E-01 1.0E-02 1.0E-03 10 1.0E-04 25°C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 2500 VDS=15V ID=12.7A 6 Ciss Capacitance (pF) VGS (Volts) 8 4 2000 1500 1000 Crss 2 500 0 Coss 0 0 5 10 15 20 25 30 35 40 0 Qg (nC) Figure 7: Gate-Charge Characteristics DYNAMIC PARAMETERS 100.0 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 100 10µs 90 80 1ms RDS(ON) limited 1.0 100µ 10ms DC TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 70 Power (W) 10.0 ID (Amps) 5 60 50 40 30 20 10 0.0 0.1 1 10 0 0.0001 100 VDS (Volts) 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4710 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 1 0.9 1.0E-02 20A 0.8 VDS=24V 0.7 VSD(V) IR (A) 1.0E-03 VDS=12V 1.0E-04 0.6 0.5 10A 5A 0.4 0.3 1.0E-05 0.2 IS=1A 0.1 1.0E-06 0 DYNAMIC 50 100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature 25 8 di/dt=800A/us 2.5 Irm trr (ns) 4 Irm (A) 125ºC di/dt=800A/us 12 25ºC Qrr 10 100 150 200 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature 15 6 15 50 125ºC 20 Qrr (nC) 0 2 125ºC 9 1.5 trr S 0 25ºC 6 1 25ºC 25ºC 2 5 S 3 0.5 125ºC 0 0 0 5 10 15 20 25 10 125ºC 7 6 5 125º 10 25ºC 5 Qrr 4 3 0 0 200 400 600 800 0 1000 di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 25 30 2.5 25ºC 2 9 trr 25ºC 6 1.5 1 2 1 Irm 20 Is=20A 125ºC 12 trr (ns) Qrr (nC) 25ºC 15 15 3 15 8 Is=20A 10 18 9 Irm (A) 20 5 Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 0 0 30 S 0 3 S 125ºC 0 0 200 400 600 800 0.5 0 1000 di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt www.aosmd.com AO4710 Gate Charge Test Circuit & Waveform Vgs Qg 20A 10V + + VDC - VDC Qgs Vds Qgd - DUT 10A Vgs 5A Ig IS=1A Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 125ºC DUT + VDC Vdd di/dt=800A/us - Rg Vgs 90% 125ºC 10% 25ºC Qrr Vgs 125ºC t d(on) tr trr t d(off) t on Irm tf 25ºC t off 25ºC 25ºC S 125ºC Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vdd Vgs Vgs I AR VDC 125ºC Rg Id Is=20A Vgs Is=20A 125ºC DUT 25ºC Vgs 25ºC trr 125º Diode Recovery Test Circuit & Waveforms 25ºC 25ºC Vds + Qrr Isd Vgs L Isd + Vdd Ig Alpha & Omega Semiconductor, Ltd. IF trr dI/dt IRM Vdd VDC - S 125ºC Vgs Irm Vds - Qrr = - Idt DUT Vds www.aosmd.com