AON7401 30V P-Channel MOSFET General Description Product Summary The AON7401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) -30V -35A RDS(ON) (at VGS=-10V) < 14mW RDS(ON) (at VGS=-6V) < 17mW 100% UIS Tested 100% Rg Tested DFN 3x3_EP Bottom View Top View D Top View S S S 1 8 D 2 7 3 6 D D G 4 5 D G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C Continuous Drain Current TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 4: Mar. 2011 -12 Steady-State Steady-State W 12 3.1 RqJA RqJL www.aosmd.com W 2 TJ, TSTG Symbol t ≤ 10s A 29 PDSM TA=70°C A -9.7 PD TC=100°C V -80 IDSM TA=70°C ±25 -23 IDM TA=25°C Units V -35 ID TC=100°C Maximum -30 -55 to 150 Typ 30 60 3.5 °C Max 40 75 4.2 Units °C/W °C/W °C/W Page 1 of 5 AON7401 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250mA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage On state drain current VDS=VGS ID=-250mA -1.7 VGS=-10V, VDS=-5V -80 TJ=55°C VGS=-10V, ID=-9A 17 27 Diode Forward Voltage IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance A 12.9 VSD Rg V VDS=-5V, ID=-9A IS=-1A,VGS=0V Reverse Transfer Capacitance nA VGS=-6V, ID=-7A Forward Transconductance -0.7 2060 VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=-10V, VDS=-15V, ID=-9A mW mW S -1 V -25 A 2600 pF 370 pF 295 VGS=0V, VDS=0V, f=1MHz mA -3 19 TJ=125°C Units ±100 14 gFS Output Capacitance -2.2 16 Static Drain-Source On-Resistance Crss -5 11 RDS(ON) Coss Max V VDS=-30V, VGS=0V IDSS ID(ON) Typ pF 2.4 3.6 W 30 39 nC Qgs Gate Source Charge 4.6 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time 9.4 ns tD(off) Turn-Off DelayTime 24 ns tf trr Turn-Off Fall Time IF=-9A, dI/dt=500A/ms 14 Qrr Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/ms 35 Body Diode Reverse Recovery Time VGS=-10V, VDS=-15V, RL=1.6W, RGEN=3W 12 ns 18 ns nC A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RqJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Mar. 2011 www.aosmd.com Page 2 of 5 AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V VDS=-5V -6V -5V 60 -4.5V -ID(A) -ID (A) 60 40 40 -4V 125°C 20 20 25°C VGS=-3.5V 0 0 0 1 2 3 4 1 5 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 Normalized On-Resistance 1.8 VGS=-6V 14 RDS(ON) (mW) 2 12 10 VGS=-10V 8 6 VGS=-10V ID=-9A 1.6 1.4 1.2 VGS=-6V ID=-7A 1 0.8 0 5 10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 30 1.0E+01 ID=-9A 1.0E+00 20 125° -IS (A) RDS(ON) (mW) 25 1.0E-01 125° 15 25° 25°C 1.0E-02 10 1.0E-03 5 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 4: Mar. 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON7401 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3200 10 VDS=-15V ID=-9A 2800 2400 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2000 1600 1200 Coss 800 2 400 0 Crss 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 1000.0 TA=25° 10.0 10ms 100ms RDS(ON) 1ms 1.0 10ms 100ms 10s TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 1000 Power (W) -ID (Amps) 100.0 100 10 DC 1 0.00001 0.1 1 10 0.001 0.1 10 1000 100 -VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZqJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZqJA.RqJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RqJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 4: Mar. 2011 www.aosmd.com Page 4 of 5 AON7401 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) td(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L EAR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 4: Mar. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5