AON7401

AON7401
30V P-Channel MOSFET
General Description
Product Summary
The AON7401 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a
load switch or in PWM applications.
VDS
ID (at VGS=-10V)
-30V
-35A
RDS(ON) (at VGS=-10V)
< 14mW
RDS(ON) (at VGS=-6V)
< 17mW
100% UIS Tested
100% Rg Tested
DFN 3x3_EP
Bottom View
Top View
D
Top View
S
S
S
1
8
D
2
7
3
6
D
D
G
4
5
D
G
Pin 1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Continuous Drain
Current
TC=25°C
Power Dissipation
B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 4: Mar. 2011
-12
Steady-State
Steady-State
W
12
3.1
RqJA
RqJL
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W
2
TJ, TSTG
Symbol
t ≤ 10s
A
29
PDSM
TA=70°C
A
-9.7
PD
TC=100°C
V
-80
IDSM
TA=70°C
±25
-23
IDM
TA=25°C
Units
V
-35
ID
TC=100°C
Maximum
-30
-55 to 150
Typ
30
60
3.5
°C
Max
40
75
4.2
Units
°C/W
°C/W
°C/W
Page 1 of 5
AON7401
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250mA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
On state drain current
VDS=VGS ID=-250mA
-1.7
VGS=-10V, VDS=-5V
-80
TJ=55°C
VGS=-10V, ID=-9A
17
27
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
A
12.9
VSD
Rg
V
VDS=-5V, ID=-9A
IS=-1A,VGS=0V
Reverse Transfer Capacitance
nA
VGS=-6V, ID=-7A
Forward Transconductance
-0.7
2060
VGS=0V, VDS=-15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
VGS=-10V, VDS=-15V, ID=-9A
mW
mW
S
-1
V
-25
A
2600
pF
370
pF
295
VGS=0V, VDS=0V, f=1MHz
mA
-3
19
TJ=125°C
Units
±100
14
gFS
Output Capacitance
-2.2
16
Static Drain-Source On-Resistance
Crss
-5
11
RDS(ON)
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
ID(ON)
Typ
pF
2.4
3.6
W
30
39
nC
Qgs
Gate Source Charge
4.6
nC
Qgd
Gate Drain Charge
10
nC
tD(on)
Turn-On DelayTime
11
ns
tr
Turn-On Rise Time
9.4
ns
tD(off)
Turn-Off DelayTime
24
ns
tf
trr
Turn-Off Fall Time
IF=-9A, dI/dt=500A/ms
14
Qrr
Body Diode Reverse Recovery Charge IF=-9A, dI/dt=500A/ms
35
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-15V, RL=1.6W,
RGEN=3W
12
ns
18
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RqJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Mar. 2011
www.aosmd.com
Page 2 of 5
AON7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
VDS=-5V
-6V
-5V
60
-4.5V
-ID(A)
-ID (A)
60
40
40
-4V
125°C
20
20
25°C
VGS=-3.5V
0
0
0
1
2
3
4
1
5
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
16
Normalized On-Resistance
1.8
VGS=-6V
14
RDS(ON) (mW)
2
12
10
VGS=-10V
8
6
VGS=-10V
ID=-9A
1.6
1.4
1.2
VGS=-6V
ID=-7A
1
0.8
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
30
1.0E+01
ID=-9A
1.0E+00
20
125°
-IS (A)
RDS(ON) (mW)
25
1.0E-01
125°
15
25°
25°C
1.0E-02
10
1.0E-03
5
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 4: Mar. 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AON7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3200
10
VDS=-15V
ID=-9A
2800
2400
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
2000
1600
1200
Coss
800
2
400
0
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
10000
1000.0
TA=25°
10.0
10ms
100ms
RDS(ON)
1ms
1.0
10ms
100ms
10s
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
1000
Power (W)
-ID (Amps)
100.0
100
10
DC
1
0.00001
0.1
1
10
0.001
0.1
10
1000
100
-VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZqJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZqJA.RqJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RqJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: Mar. 2011
www.aosmd.com
Page 4 of 5
AON7401
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 4: Mar. 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5