AMMP-5620 6 – 20 GHz High Gain Amplifier in SMT Package Data Sheet Description Features The AMMP-5620 MMIC is a GaAs wide-band amplifier in a surface mount package designed for medium output power and high gain over the 6-20 GHz frequency range. The 3 cascaded stages provide high gain while the single bias supply offers ease of use. It is fabricated using a PHEMT integrated circuit process. The RF input and output ports have matching circuitry for use in 50-ohms environments. The MMIC is a cost effective alternative to hybrid (discrete FET) amplifiers that require complex tuning and assembly processes. • • • • • • • Vd NC 1 2 3 8 4 7 6 5 NC NC NC RFout Pin Function 1 2 3 4 5 6 7 8 NC Vd NC RF_out NC NC NC RF_in • General purpose, wide band amplifier in communication systems or microwave instrumentation • High Gain Amplifier Functional Block Diagram Vd 1 2 0.1uF 3 100pF RFin 4 RFin NC Applications 8 Package Diagram Surface Mount Package, 5.0 x 5.0 x 1.25 mm Wide Frequency Range 6-20 GHz High Gain: 17.5 dB Typical Medium Output P1dB: 14.8 dBm Typical Input and Output Return Loss: <-10 dB Typical 50 Ohm Input and Output Match Single Supply Bias: 5V @ 95 mA Typical 7 6 RFout 5 AMMP-5620 Note: Package base: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (40V) ESD Human Body Model (150V) Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating = Level 2A Electrical Specifications 1. Small/large signal data measured in a fully de-embedded test fixture at TA = 25 degree Celsius. 2. Specifications are derived from measurements in a 50 Ohm test environment. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise matching. 3. All tested parameters guaranteed with measurement accuracy ± 0.5 dB for NF and ± 1.0 dB for gain. Table 1. RF Electrical Characteristics (TA=25°C, Freq=18GHz, Vd=5.0V, Idq=95mA) Parameter Min Typ. Max Unit Small-signal Gain, Gain 15.5 17.5 19.5 dB Noise Figure, NF 5.1 7.0 dB Output Power at 1dB Gain Compression, P1dB 14.8 dBm Third Order Intercept Point, OIP3 22.5 dBm Input Return Loss, RLin 11.5 dB Output Return Loss, RLout 11.6 dB Reverse Isolation, Isolation -43.0 dB Table 2. Recommended Operating Range Description Min. Drain Supply Voltage, Vd Drain Supply Current, Id Typical Max. 5 70 95 Unit V 130 mA Notes: 1. Ambient operation temperature TA = 25°C unless otherwise noted. 2. Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Table 3. Thermal Properties Parameter Test Conditions Value Thermal Resistance, θjc θjc = 28 °C/W Note: Channel-to-board Thermal Resistance is measured using Infrared Microscopy method. Absolute Minimum and Maximum Ratings Table 4. Minimum and Maximum Ratings Description Max. Unit Drain Supply Voltage, Vd 7.5 V Total Drain Current, Id 135 mA RF Input Power, Pin 20 dBm Power Dissipation, Pd 1.0 W Channel Temperature, Tch +150 °C +150 °C +260 °C Storage Temperature, Tstg Maximum Assembly Temperature, Tmax Min. -65 Comments CW Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vd, Id, Pd and Pin were determined at an ambient temperature of 25°C unless noted otherwise. 2 Selected performance plots All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports. 20 0 12 8 4 -30 -40 -50 -20 -30 -60 4 7 10 13 16 Frequency (GHz) 19 22 Figure 1. Gain -70 7 10 13 16 Frequency (GHz) 19 8 -5 7 -40 22 NF (dB) -20 4 3 -25 2 -30 1 4 7 10 13 16 Frequency (GHz) 19 0 22 Figure 4. Output Return Loss 13 16 Frequency (GHz) 19 22 12 8 4 4 7 10 Figure 5. Noise Figure 13 16 Frequency (GHz) 19 22 0 4 7 10 13 16 Frequency (GHz) 19 22 Figure 6. P1dB 120 18 GHz 15 10 13 GHz 115 7 GHz 110 5 105 0 100 -5 95 -10 Id (mA) 20 10 16 5 -15 7 20 6 -10 4 Figure 3. Input Return Loss Figure 2. Isolation 0 -35 4 OP1dB (dBm) 0 Output RL (dB) -10 -20 Input RL (dB) Isolation (dB) Gain (dB) 16 Pout (dBm) 0 -10 90 -20 -15 -10 -5 0 5 10 Pin (dBm) Figure 7. Pout and Id vs. Pin Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. 3 Over Voltage plots All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports. 20 0 8 Vd=4V Vd=5V 4 7 10 13 16 Frequency (GHz) 19 22 Figure 8. Gain and Voltage -40 -50 -70 -20 8 -5 7 4 7 10 13 16 Frequency (GHz) 19 22 -40 -20 Vd=4V Vd=5V -30 4 7 10 13 16 Frequency (GHz) 19 Figure 11. Output Return Loss and Voltage 4 3 Vd=4V Vd=5V 1 22 0 7 10 13 16 Frequency (GHz) 19 22 16 2 Vd=6V 4 20 5 -15 Vd=6V Figure 10. Input Return Loss and Voltage 6 -10 -25 Vd=4V Vd=5V -30 Figure 9. Isolation and Voltage 0 -35 -10 -30 NF (dB) Output RL (dB) Vd=6V -60 Vd=6V 4 -20 OP1dB (dBm) 0 -10 0 Input RL (dB) 12 Isolation (dB) Gain (dB) 16 Vd=4V Vd=5V 7 10 13 16 Frequency (GHz) Figure 12. Noise Figure and Voltage 19 8 Vd=4V Vd=5V 4 Vd=6V 4 12 22 0 Vd=6V 4 7 10 13 16 Frequency (GHz) 19 22 Figure 13. P1dB and Voltage Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. 4 Over Temperature Performance Plots All data measured on at Vd = 5V, Id = 95mA, Ta = 25°C, and 50 Ω at all ports 0 12 Isolation (dB) 8 -40 °C 25 °C 4 0 7 10 13 16 Frequency (GHz) 19 22 Figure 14. Gain and Temperature Output RL (dB) -20 85 °C -30 -40 -50 -70 8 -5 7 -10 6 4 7 10 13 16 Frequency (GHz) 19 NF (dB) -20 -40 °C 25 °C -30 4 7 10 13 16 Frequency (GHz) 19 -40 °C 25 °C Figure 17. Output Return Loss and Temperature 7 10 13 16 19 22 Frequency (GHz) Figure 16. Input Return Loss and Temperature 4 3 0 4 16 -40 °C 25 °C 85 °C 1 22 85 °C 20 2 85 °C -40 22 5 -15 -25 -20 -30 Figure 15. Isolation and Temperature 0 -35 -10 -60 85 °C 4 -10 0 OP1dB (dBm) Gain (dB) 16 -40 °C 25 °C Input RL (dB) 20 4 7 10 13 16 Frequency (GHz) Figure 18. Noise Figure and Temperature 19 12 8 -40 °C 25 °C 85 °C 4 22 0 4 7 10 13 16 19 22 Frequency (GHz) Figure 19. P1dB and Temperature 100 Id (mA) 95 90 -40 °C 25 °C 85 °C 85 80 3 3.5 4 4.5 Vd (V) 5 5.5 6 Figure 20. Id vs. Vd Note: These measurements are obtained using demo board with 50 Ohm traces at input and output. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity or low noise matching. 5 Biasing and Operation The AMMP-5620 only requires a single positive supply connected to the Vd pin (2). The recommended supply voltage is 5V. The supply should be bypassed with a 0.1uF capacitor placed as close to the component as possible. The package base is the RF and DC ground connection. The biasing arrangement is shown in Figure 21. Figure 22 shows a simplifies schematic for the amplifier die. All three stages are self-biased as shown. Each stage has feedback around it to control the gain, match and performance, resulting in excellent wideband performance. Also shown are the on-chip DC blocking capacitors for both the RFin and RFout pins. The AMMP Packaged Devices are compatible with high volume surface mount PCB assembly processes. The PCB material and mounting pattern, as defined in the data sheet, optimizes RF performance and is strongly recommended. An electronic drawing of the land pattern is available upon request from Avago Sales & Application Engineering. Please refer to the Absolute Maximum Ratings table for allowed DC and thermal conditions. Figure 23. Demonstration Board (available upon request) Figure 21. Typical Application Figure 22. Simplified MMIC Schematics 6 Typical Scattering Parameters Please refer to <http://www.avagotech.com> for typical scattering parameters data. Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). Part Number Ordering Information Devices per Container Container AMMP-5620-BLKG 10 Antistatic Bag AMMP-5620-TR1G 100 7” Reel AMMP-5620-TR2G 500 7” Reel Part Number For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2013 Avago Technologies. All rights reserved. Obsoletes AV01-0585EN AV02-0513EN - July 16, 2013