NPN 2N1613 – 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCER VEBO IC ICM IBM Collector-Base Voltage Collector-Emitter Voltage (RBE = 10Ω) Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current PD Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range @ Tcase= 25° @ Tcase= 100° @ Tamb= 25° Value Unit 75 50 7 5 1 200 3 1.7 0.8 200 V V V mA A mA W W W °C -65 to +150 °C Value Unit 58 219 °C/ W °C/ W THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS 1/3 NPN 2N1613 – 2N1711 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings ICBO Collector Cutoff Current IEB0 Emitter Cutoff Current Test Condition(s) VCE=60 V, IE=0 VCE=60 V, IE=0 Tamb = 150°C VEB=5 V VEB=5 V Collector Base Breakdown Voltage Emitter Base Breakdown VEBO Voltage Collector-Emitter VCE(SAT)(*) saturation Voltage Base-Emitter saturation VBE(SAT)(*) Voltage VCBO hFE(*) DC Current Gain Symbol CCBO CEBO NF Collector-Base Capacitance Emitter-Base Capacitance Noise Figure Typ Max Unit - - 10 nA - - 10 µA - - 10 5 nA IC=0.1 mA 75 - - V IE=100 µA , IC=0 7 - - V - - 1.5 V IC=150 mA, IB=15 mA - - 1.3 V IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V IC=10 µA, VCE=10 V IC=0.1 mA, VCE=10 V IC=10 mA, VCE=10 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V 20 35 40 20 20 35 75 100 40 - 120 300 - - 2N1613 2N1711 IC=150 mA , IB=15 mA Ratings Transition Frequency fT Min 2N1613 2N1711 Test Condition(s) Mx Unit 60 70 - - MHz IE= 0, VCB= 10 V, f = 1MHz - - 25 pF IC= 0, VEB= 0.5V, f = 1MHz - - 80 pF 2N1613 - - 12 2N1711 - - 8 IC=50 mA, VCE=10 V, f= 100MHz 2N1613 2N1711 Min Typ IC= 0.3 mA, VCE= 10 V f = 1 kHz, R9= 510 Ω IC= 0.3 mA, VCE= 10 V f = 1 kHz, R9= 510 Ω dB (*) Pulse conditions : tp < 300 µs, δ =2%. 24/09/2012 COMSET SEMICONDUCTORS 2/3 NPN 2N1613 – 2N1711 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 24/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3