NPN 2N2221 – 2N2221A 2N2222 – 2N2222A SWITCHING SILICON TRANSISTORS The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case . They are designed for high-speed switching applications and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Value Symbol Ratings 2N2221 2N2222 2N2221A 2N2222A Unit VCEO Collector-Emitter Voltage 30 40 V VCBO Collector-Base Voltage 60 75 V VEBO Emitter-Base Voltage 5 6 V IC Collector Current PD Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range 800 Tamb = 25° 0.5 Tcase= 25° 1.8 mA W 175 °C -65 to +200 °C THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to ambient in free air RthJ-c Thermal Resistance, Junction to case Value Unit 50 °C/W 187.5 °C/W 1|4 NPN 2N2221 – 2N2221A 2N2222 – 2N2222A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO IEBO ICEX VCEO VCBO VEBO Ratings Collector Cutoff Current Emitter Cutoff Current Collector Cutoff Current Collector Emitter Breakdown Voltage (*) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB= 50 V IE= 0 VCB= 60 V IE= 0 Tj= 25°C Tj= 150°C Tj= 25°C Tj= 150°C VBE= 3.0 V, IC=0 VCE= 60 V, -VBE= 3V IC= 10 mA, IB= 0 IC= 10 µA, IE= 0 IE= 10 µA, IC= 0 IC=0.1 mA, VCE=10 V IC=1 mA, VCE=10 V IC=10 mA, VCE=10 V hFE DC Current Gain (*) IC=10 mA, VCE=10 V Tamb = -55°C IC=150 mA, VCE=1 V IC=150 mA, VCE=10 V IC=500 mA, VCE=10 V 16/10/2012 Min Typ Mx Unit 2N2221-2N2222 2N2221-2N2222 2N2221A-2N2222A 2N2221A-2N2222A 2N2221-2N2222 2N2221A-2N2222A - - 10 10 10 10 nA µA nA µA - - 10 nA 2N2221A-2N2222A - - 10 nA 2N2221-2N2222 30 - - 2N2221A-2N2222A 40 - - 2N2221-2N2222 60 - - 2N2221A-2N2222A 75 - - 2N2221-2N2222 5 - - 6 20 35 25 50 35 75 15 35 20 50 40 100 20 25 30 40 - 120 300 - - - 2N2221A-2N2222A 2N2221-2N2221A 2N2222-2N2222A 2N2221-2N2221A 2N2222-2N2222A 2N2221-2N2221A 2N2222-2N2222A 2N2221A 2N2222A 2N2221-2N2221A 2N2222-2N2222A 2N2221-2N2221A 2N2222-2N2222A 2N2221 2N2221A 2N2222 2N2222A COMSET SEMICONDUCTORS 2|4 V V V - NPN 2N2221 – 2N2221A 2N2222 – 2N2222A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCE(SAT) VBE(SAT) fT hfe td tr ts tf rb,CC Ratings Test Condition(s) 2N2221-2N2222 2N2221A-2N2222A 2N2221-2N2222 2N2221A-2N2222A 2N2221-2N2222 IC=150 mA, IB=15 mA Base-Emitter 2N2221A-2N2222A saturation Voltage 2N2221-2N2222 (*) IC=500 mA, IB=50 mA 2N2221A-2N2222A 2N2221-2N22218A Transition IC=20 mA, VCE=20 V 2N2222 f= 100MHz frequency 2N2222A 2N2221A IC=1 mA, VCE=10 V f= 1kHz 2N2222A Small signal current gain 2N2221A IC=10 mA, VCE=10 V f= 1kHz 2N2222A IC=150 mA, IB =15 mA 2N2221A Delay time -VBB=0.5 V, VCC=30 V 2N2222A IC=150 mA, IB =15 mA 2N2221A Rise time -VBB=0.5 V, VCC=30 V 2N2222A IC=150 mA, VCC=30 V 2N2221A Storage time IB1 = -IB2 =15 mA 2N2222A IC=150 mA, VCC=30 V 2N2221A Fall time IB1 = -IB2 =15 mA 2N2222A 2N2221A Feedback time IC=20 mA, VCE=20 V constant f= 31.8MHz 2N2212A IC=150 mA, IB=15 mA Collector-Emitter saturation Voltage (*) IC=500 mA, IB=50 mA Min Typ Mx Unit 0.6 - - 0.4 0.3 1.6 1 1.3 1.2 2.6 2 250 - - 300 30 50 50 75 - 150 300 300 375 - - 10 ns - - 25 ns - - 225 ns - - 60 ns - - 150 ps (*) Pulse conditions : tp < 300 µs, δ =2% 16/10/2012 COMSET SEMICONDUCTORS 3|4 V V MHz - NPN 2N2221 – 2N2221A 2N2222 – 2N2222A MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 16/10/2012 [email protected] COMSET SEMICONDUCTORS 4|4