PNP 2N2906 – 2N2906A GENERAL PURPOSE AMPLIFIERS TRANSISTORS The 2N2906 and 2N2906A are PNP transistors mounted in TO-18 metal package. They are intended for high speed switching and general purpose applications. NPN complements are 2N2221 and 2N2221A . Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Value Ratings Unit 2N2906 2N2906A -40 -60 VCEO Collector-Emitter Voltage (IB=0) VCBO Collector-Base Voltage (IE=0) -60 V VEBO Emitter-Base Voltage (IC=0) -5 V IC Collector Current -600 mA ICM Peak Collector Current -800 mA IBM Peak Base Current -200 mA Tamb = 25° 0.4 W Tcase= 25° 1.2 W 200 °C PD V Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range -65 to +150 °C Tamb Operating Ambient Temperature -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient in free air 438 °C/W RthJ-c Thermal Resistance, Junction to case 146 °C/W PNP 2N2906 – 2N2906A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICBO ICBO IEBO VCEO VCBO VEBO Ratings Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current (*) Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB= -50 V Ta= 25°C IE= 0 Ta= 150°C VEB= -5 V, IC= 0 IC= -10 mA, IB= 0 IC= -10 µA, IE= 0 IE= -10 µA, IC= 0 IC= -0.1 mA, VCE= -10 V IC= -1 mA, VCE= -10 V hFE DC Current Gain IC= -10 mA, VCE= -10 V IC= -150 mA, VCE= -10 V IC= -500 mA, VCE= -10 V VCE(SAT) VBE(SAT) fT td tr Cc Ce Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) IC= -150 mA, IB= -15 mA IC= -500 mA, IB= -50 mA IC= -150 mA, IB= -15 mA IC= -500 mA, IB= -50 mA IC=-50 mA, VCE=-20 V f= 100MHz (*) IC=-150 mA ,IB =-15 mA -VCC=-30 V IE= Ie = 0 ,VCB= -10 V f = 1 MHz I = I = 0 ,VEB= -2 V Emitter capacitance C c f = 1 MHz Transition frequency Delay time Rise time Collector capacitance 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 2N2906A 2N2906 Min Typ Max Unit - - -10 -20 -10 -20 - - -50 nA -60 -40 - - V -60 - - V -5 - - V 40 20 40 25 40 35 - - 40 - 120 40 20 - - - - -0.4 - - -1.6 - - -1.3 - - -2.6 200 - - MHz - - 10 40 ns - - 8 pF - - 30 pF nA µA - V (*) Pulse conditions : tp < 300 µs, δ =2% 01/10/2012 COMSET SEMICONDUCTORS 2|3 PNP 2N2906 – 2N2906A SWITCHING TIME Symbol ton td tr toff Ts Tf Ratings Turn-on time Delay time Rise time Turn-off time Storage time Fall time Test Condition(s) ICon= -150 mA IBon = -15 mA IBoff= 15 mA Min - Typ - Max 45 15 35 300 250 50 Unit ns ECHANICAL DATA CASE TO-18 (PNP) DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 01/10/2012 [email protected] COMSET SEMICONDUCTORS 3|3