NPN BCY58 – BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS The BCY58 and BCY59 are NPN transistors mounted in TO-18 metal package with the collector connected to the case . They are designed for use in audio drive and low-noise input stages. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage(1) VCES Collector-Emitter Voltage (VBE =0) VEBO Emitter-Base Voltage IC Collector Current IB Base Current PD PD Total Power Dissipation Total Power Dissipation @ Tamb = 45° @ Tcase= 45° TJ Junction Temperature TStg Storage Temperature range Value BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 Unit 45 32 45 32 7 7 V 200 mA 50 mA 0.39 mW 1 Watts 200 °C -65 to +150 °C Value Unit V V (1) Applicable up to IC = 500mA THERMAL CHARACTERISTICS Symbol Ratings RthJ-a Thermal Resistance, Junction to mounting base 450 °C/W RthJ-c Thermal Resistance, Junction to ambient in free air 150 °C/W COMSET SEMICONDUCTORS 1/4 NPN BCY58 – BCY59 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specifie Symbol ICES ICES IEBO VCEO VEBO VCE(SAT) VBE(SAT) VBE Ratings Collector Cutoff Current Collector Cutoff Current Test Condition(s) VCB =45 V VBE =0V VCB =32 V VB =0V VCB =45 V VBE =0V,Tamb =150°C VCB =32 V, VBE =0 Tamb =150°C Symbol Ratings IC =10 µA, VCE =5 V hFE DC Current Gain IC =10 µA, VCE =5 V IC =10 mA, VCE =1 V hfe Small-Signal Current Gain 18/10/2012 IC =100 mA, VCE =1V IC =2 mA, VCE =5 V, f = 1kHz Max Unit - - 10 nA - - 10 µA - - 10 nA 45 32 - - V 7 - - V - 0.12 0.25 - 04 08 0.6 0.7 0.85 0.7 0.85 1.2 - 0.5 - 0.2 - - 0.55 - 0.7 - 0.7 - - 0.76 - BCY58 BCY59 BCY58 VBE =5.0 VIC =0 Test Condition(s) Typ BCY59 BCY59 BCY58 BCY59 IC =2 mA, IB =0 BCY58 BCY59 IE =1µA, IC =0 BCY58 BCY59 IC =10 mA IB =0.25 mA BCY58 Collector-Emitter saturation Voltage BCY59 IC =100 mA IB =2.5 mA BCY58 BCY59 IC =10 mA IB =0.25 mA BCY58 Base-Emitter Saturation Voltage BCY59 IC =100 mA IB =2.5 mA BCY58 BCY59 IC =10 µA, VCE =5 V BCY58 BCY59 VCE =VCE max IC =20 µA, Tj =100°C BCY58 BCY59 Base-Emitter Voltage IC =2 mA, VCE =5 V BCY58 BCY59 IC =10 mA, VCE =1 V BCY58 BCY59 IC =100 mA, VCE =1 V BCY58 Emitter Cutoff Current Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Min BCY59VII BCY58VII Typ.20 >120 <220 >80 >40 >125 <250 COMSET SEMICONDUCTORS V BCY59VIII BCY58VIII >20 Typ.95 >180 <310 >120 <400 >45 >175 <350 V BCY59IX BCY59X BCY58IX BCY58X >40 >60 Typ.190 Typ.300 >250 >380 <460 <630 >160 >240 <630 <1000 >60 >60 >250 >350 <500 <700 2/4 NPN BCY58 – BCY59 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specifie Symbol Ratings Transition frequency Noise figure , RS=2kΩ fT F td Delay time tr Rise time ton Turn on time ts Storage time tf Fall time toff Turn off time td Delay time tr Rise time ton Turn on time ts Storage time tf Fall time toff Turn off time CC Collector capacitance CE Test Condition(s) IC =10 mA, VCE =5 V f = 100MHz IC =200 µA, VCE =5 V f = 1kHz, B =200Hz IC=10 mA , IB =1 mA -IBM =1 mA, VBB=3.6 V R1= R2 = 5kΩ RL= 990 Ω IC=100 mA , IB =10 mA -IBM =10 mA, VBB =5 V R1 = 500Ω , R1 = 700Ω RL= 990 Ω IE = Ie = 0 ,VCB =10 V f = 1MHz I = I = 0 ,VEB =0.5 V Emitter capacitance C c f = 1MHz 18/10/2012 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 BCY59 BCY58 COMSET SEMICONDUCTORS Min Typ Mx Unit 150 - - MHz - 2 6 db - 35 - - 50 - - 85 150 - 400 - - 80 - - 480 800 - 5 - - 50 - - 55 150 - 250 - - 200 - - 450 800 - - 5 pF - - 15 pF ns ns 3/4 NPN BCY58 – BCY59 MECHANICAL DATA CASE TO-18 DIMENSIONS (mm) min A B C D E F G H I L max 12.7 0.9 2.54 45° Pin 1 : Pin 2 : Pin 3 : Case : 0.49 5.3 4.9 5.8 1.2 1.16 - emitter base Collector Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 18/10/2012 [email protected] COMSET SEMICONDUCTORS 4/4