PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 GENERAL PURPOSE AMPLIFIERS AND SWITCHES They are silicon planar epitaxial PNP transistors mounted in TO-39 metal package. They are intended for large signal, low noise industrial applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings -VCBO Collector-Base Voltage IE = 0 -VCEO Collector-Emitter Voltage IB = 0 -VEBO Emitter-Base Voltage IC = 0 -IC Collector Current Ptot TJ TStg Value 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 @ Tcase= < 25° @ Tamb= < 25° Junction Temperature Storage Temperature range 60 80 60 80 60 80 60 80 Unit V V 5 V 1 A 4 0.8 200 -65 to +200 °C °C Value Unit W THERMAL CHARACTERISTICS Symbol Ratings RthJ-c Thermal Resistance, Junction-case 44 K/ W RthJ-amb Thermal Resistance, Junction-ambient 218 K/ W COMSET SEMICONDUCTORS 1/4 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol -ICBO Ratings Collector Cutoff Current Test Condition(s) IE = 0, VCB = 50 V IE = 0, VCB = 60 V VCB =50 V IE = 0 ; V Tamb = 150°C VCB =60 V IE = 0, VCB = 50 V IE = 0, VCB = 60 V VCB =50 V IE = 0 Tamb = 150°C VCB =60 V -VCB0 Collector – Base -IC = 10 µA Breakdown Voltage IE = 0 -VCE0 (*) Collector – Emitter -IC = 10 mA Breakdown Voltage IB = 0 -VEB0 Emitter – Base -IE = 10 µA Breakdown Voltage IC = 0 -VCE(SAT) (*) -VBE (*) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 17/10/2012 2N4030 2N4031 2N4030 2N4031 2N4032 2N4033 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 -IC = 150 mA, -IB = 15 mA -IC = 500 mA, -IB = 50 mA -IC = 1 A, -IB = 100 mA 2N4030 2N4032 -IC = 150 mA, -IB = 15 mA -IC = 500 mA, -IB = 50 mA -IC = 1 A, -IB = 100 mA 2N4030 2N4032 COMSET SEMICONDUCTORS Min Typ Max Unit - - 50 nA - - 50 µA - - 50 nA - - 50 µA 60 80 60 80 60 80 60 80 - - 5 - - - - 0.15 0.5 - - 1 - - 0.9 1.1 - - 1.2 V V V V 2/4 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) -IC = 100 µA, -VCE = 5 V -IC = 100 mA, -VCE = 5V hFE (*) DC Current Gain -IC = 500 mA, -VCE = 5V -IC = 1 A, -VCE = 5 V -IC = 100 mA, -VCE = 5V Tamb = -55°c fT CEBO CCBO Transition Frequency -IC = 50 mA, -VCE = 10 V f = 100 MHZ Emitter – base Capacitance Collector – base Capacitance IC = 0, -VEB = 0.5 V f = 1 MHZ IE = 0, -VCB = 10V f = 1 MHZ -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA -IC =500 mA, -VCC = 30V -IB1 = -IB1 = 50 mA tS Storage times tf Fall times ton Turn-on times 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 2N4030 2N4031 2N4032 2N4033 Min Typ Max 30 - - 75 - - 40 - 120 100 - 300 25 - - Unit 70 - - 15 10 40 25 - - 15 - - 40 - - 100 - 400 150 - 500 - - 110 pF - - 20 pF - - 350 ns - - 50 ns - - 100 ns MHZ (*) Pulsed : pulse duration = 300µs, duty cycle = 1% 17/10/2012 COMSET SEMICONDUCTORS 3/4 PNP 2N4030 – 2N4031 – 2N4032 – 2N4033 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised September 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 17/10/2012 [email protected] COMSET SEMICONDUCTORS 4/4