CXT5401 TRANSISTOR (PNP) SOT-89 FEATURE z Switching and amplification in high voltage Applications such as telephony z Low current(max. 500mA) High voltage(max.160v) z 1. BASE 1 2. COLLECTOR 1 22 3 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT V(BR)CBO IC= -100μA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO IC = -1mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE = -10μA, IC=0 -5 V Collector-base breakdown voltage Collector cut-off current ICBO VCB = -120 V, IE=0 -50 nA Emitter cut-off current IEBO VEB= -3V, IC=0 -50 nA hFE(1) VCE= -5V, IC=-1 mA 50 hFE(2) VCE= -5V, IC= -10 mA 60 hFE(3) VCE= -5V, IC=-50 mA 50 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 300 VCE(sat) IC= -10 mA, IB= -1 mA -0.2 V VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V VBE(sat) IC= -10 mA, IB= -1 mA -1 V VBE(sat) IC= -50 mA, IB= -5 mA VCE= -10V, IC= -10mA, f = 100MHz VCB=-10V, IE= 0,f=1MHz VCE= -5.0V, IC= -200μA, RS= 10Ω,f =10Hz to15.7kHz -1 V 300 MHz 6 pF 8 dB Transition frequency fT Output Capacitance Cob Noise Figure NF 100 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ CXT5401 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５