BF8 20/ BF8 22 TRANSISTOR (NPN) SOT-23 FEATURES z Low current (max.50 mA) z High voltage (max.300V) z Telephony and professional communication equipment. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BF820:1V, BF822: 1X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Collector-Base Voltage VCBO BF820 BF822 BF820 BF822 Collector-Emitter Voltage VCEO Units 300 250 300 250 V V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions IC=100μA, IE=0 MIN BF820 BF822 BF820 BF822 MAX 300 250 300 250 UNIT V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB=200V,IE=0 0.01 μA Emitter cut-off current IEBO VEB= 5V,IC=0 0.05 μA DC current gain hFE VCE= 20V,IC=25mA VCE(sat) IC=30mA,IB= 5mA 0.6 V Collector-emitter saturation voltage Transition frequency Collector output capacitance fT Cob IC=1mA, IB=0 VCE=10V, IC= 10mA,f=100MHz VCB=30V,IE=0,f=1MHz V 5 V 50 60 MHz 1.6 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ pF BF8 20/ BF8 22 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５