Product Specification 2SC3720 Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V (Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for high speed switching and horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range Website：www.jmnic.com Product Specification 2SC3720 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 2.0 V hFE DC Current Gain IC= 4A; VCE= 5V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 0.1 mA 1.0 μs 3.5 μs 0.3 μs 800 B B 6 UNIT V 20 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time Website：www.jmnic.com IC= 4A; IB1= 0.8A; IB2= -1.6A; VCC= 250V