NPN S I L I C O N T RA N S I S T O R K I SEMICONDUCTOR C3198 . █ APPLICATIONS General Purpose And Switching Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………400mW 1―Emitter，E 2―Collector，C 3―Base，B V CBO——Collector-Base Voltage………………………………60V VCEO——Collector-Emitter Voltage……………………………50V V EBO ——Emitter-Base Voltage………………………………5V IC——Collector Current………………………………………150mA Ib——Base Current………………………………………………50mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions ICBO Collector Cut-off Current 100 nA VCB=60V, IE=0 IEBO Emitter Cut-off Current 100 nA VEB=5V, IC=0 HFE(1) DC Current Gain 70 HFE(2) DC Current Gain 25 VCE(sat) Collector- Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 700 VCE=6V, IC=2mA 100 0.1 VCE=6V, IC=150mA 0.25 V IC=100mA, IB=10mA 1.0 V IC=100mA, IB=10mA fT Cob Current Gain-Bandwidth Product 80 Output Capacitance 2.0 3.5 MHz pF NF Noise Figure 1.0 10 dB VCE=10V, IC=1mA VCB=10V, IE=0，f=1MHz VCE=6V, IC=100μA f=1KHz,Rg=10KΩ █ hFE Classification O Y 70—140 120—240 GR 200—400 BL 350—700