DCR960G26 Phase Control Thyristor High Power Semiconductor Devices Preliminary Information FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2600V 960A 13000A 1500V/µs 500A/µs * Higher dV/dt selections available High Power Drives High Voltage Power Supplies Static Switches VOLTAGE RATINGS Part and Ordering Number DCR960G28 DCR960G26 DCR960G24 Repetitive Peak Voltages VDRM and VRRM V 2800 2600 2400 Conditions Tvj = -40°C to 125°C, IDRM = IRRM = 50mA, VDRM, VRRM tp = 10ms, VDSM & VRSM = VDRM & VRRM + 100V respectively Outline type code: G (See Package Details for further information) Lower voltage grades available. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. For example: DCR960G26 Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. DCR960G26 CURRENT RATINGS Tcase = 60°C unless stated otherwise Parameter Symbol Test Conditions Max. Units 965 A Double Side Cooled IT(AV) Mean on-state current IT(RMS) RMS value - 1516 A Continuous (direct) on-state current - 1420 A IT Half wave resistive load SURGE RATINGS Parameter Symbol ITSM 2 It Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 125°C 13.0 kA VR = 0 0.845 MA s Min. Max. Units 2 I t for fusing 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Tvj Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Virtual junction temperature Test Conditions Double side cooled DC - 0.0268 °C/W Single side cooled Anode DC - 0.0527 °C/W Cathode DC - 0.0652 °C/W Clamping force 11.5kN Double side - 0.0072 °C/W (with mounting compound) Single side - .0144 °C/W On-state (conducting) - 135 °C Reverse (blocking) - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 10 13 kN DCR960G26 DYNAMIC CHARACTERISTICS Symbol IRRM/IDRM Parameter Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tcase = 125°C - 50 mA dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125°C, gate open - 1500 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 2x IT(AV) Repetitive 50Hz - 250 A/µs Gate source 30V, 10, Non-repetitive - 500 A/µs tr < 0.5µs, Tj = 125°C VT(TO) rT tgd Threshold voltage – Low level 100A to 500A at Tcase = 125°C - 0.8 V Threshold voltage – High level 500A to 3000A at Tcase = 125°C - 0.95 V On-state slope resistance – Low level 100A to 500A at Tcase = 125°C - 0.7556 m On-state slope resistance – High level 500A to 3000A at Tcase = 125°C - 0.51 m TBD TBD µs 150 350 µs 700 1500 µC Delay time VD = 67% VDRM, gate source 30V, 10 tr = 0.5µs, Tj = 25°C tq Turn-off time Tj = 125°C, VR = 200V, dI/dt = 5A/µs, dVDR/dt = 20V/µs linear QS Stored charge IT = 2000A, Tj = 125°C, dI/dt = 5A/µs, IL Latching current Tj = 25°C, VD = 5V - 3 A IH Holding current Tj = 25°C, RG-K = , ITM = 500A, IT = 5A - 300 mA DCR960G26 GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25°C 1.5 V VGD Gate non-trigger voltage At VDRM, Tcase = 125°C TBD V IGT Gate trigger current VDRM = 5V, Tcase = 25°C 250 mA IGD Gate non-trigger current VDRM = 5V, Tcase = 25°C TBD mA CURVES Instantaneous on-state current IT - (A) 3000 25°C min 25°C max 125°C min 125°C max 2000 1000 0 0.5 1.0 1.5 2.0 2.5 Instantaneous on-state voltage VT - (V) Fig.2 Maximum & minimum on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Where A = 0.404415 B = 0.080354 C = 0.000415 D = 0.003401 these values are valid for Tj = 125°C for IT 50A to 3000A DCR960G26 o Mean power dissipation - (kW) Maximum case temperature, T case ( C ) 130 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 180 120 90 60 30 0 120 180 120 90 60 30 110 100 90 80 70 60 50 40 30 20 10 0 500 1000 1500 2000 2500 3000 3500 500 1000 1500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) Fig.3 On-state power dissipation – sine wave Fig.4 Maximum permissible case temperature, double side cooled – sine wave 130 180 120 90 60 30 120 110 100 12 11 Mean power dissipation - (kW) o Maximum heatsink temperature, T Heatsink - ( C ) 0 90 80 70 60 50 40 30 20 10 9 8 7 6 5 d.c. 180 120 90 60 30 4 3 2 10 1 0 0 0 500 1000 1500 Mean on-state current, IT(AV) - (A) Fig.5 Maximum permissible heatsink temperature, double side cooled – sine wave 0 1000 2000 3000 4000 Mean on-state current, IT(AV) - (A) Fig.6 On-state power dissipation – rectangular wave 130 130 110 100 d.c. 180 120 90 60 30 120 d.c. 180 120 90 60 30 120 o Maximum heatsik temperature T heatsink - ( C) Maximum permissible case temperature , Tcase - (°C) DCR960G26 90 80 70 60 50 40 30 20 110 100 90 80 70 60 50 40 30 20 10 10 0 0 0 500 1000 1500 2000 0 2500 500 1000 Fig.7 Maximum permissible case temperature, double side cooled – rectangular wave Anode side cooled Double Side Cooled Anode Cooled Zth = [Ri x ( 1-exp. (t/ti))] 50 3 16.9074 0.0066401 0.0457025 0.4962482 1.8248 2.3214 5.2661 10.2686 34.8031 0.0066948 0.045528 0.3484209 4.582 2.4895 5.9105 7.4256 49.3432 0.0070404 0.052895 0.3933903 4.2295 Ri (°C/kW) Ti (s) Cathode Cooled 2 5.4226 Ri (°C/kW) Ti (s) Cathode side cooled 1 2.2995 Ri (°C/kW) Ti (s) 70 Themal impedance Z th(j-c) ( °C/kW ) 2000 Fig.8 Maximum permissible heatsink temperature, double side cooled – rectangular wave Double side cooled 60 1500 Mean on-state current, IT(AV) - (A) Mean on-state current, IT(AV) - (A) 4 2.1488 [1] 40 Rth(j-c) Conduction 30 Tables show the increments of thermal resistance R th(j-c) when the device operates at conduction angles other than d.c. 20 Double side cooling Zth (z) 10 0 0.001 0.01 0.1 1 10 100 ° 180 120 90 60 30 15 sine. 4.15 4.90 5.74 6.53 7.16 7.46 rect. 2.72 4.02 4.79 5.65 6.64 7.18 Anode Side Cooling Zth (z) ° 180 120 90 60 30 15 sine. 4.15 4.89 5.73 6.52 7.15 7.44 rect. 2.72 4.02 4.78 5.65 6.62 7.16 Time ( s ) Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW) Cathode Sided Cooling Zth (z) ° 180 120 90 60 30 15 sine. 4.13 4.87 5.69 6.46 7.07 7.36 rect. 2.71 4.00 4.76 5.60 6.56 7.09 DCR960G26 40 2 Conditions: Tcase= 125°C VR = 0 half-sine w ave 10 30 ITSM I2t 20 1 10 0 5 1 10 Number of cycles Fig.10 Multi-cycle surge current 100 1 10 Pulse width, tP - (ms) Fig.11 Single-cycle surge current 0 100 I2t (MA2s) Conditions: Tcase = 125°C VR =0 Pulse width = 10ms Surge current, ITSM - (kA) Surge current, ITSM- (kA) 15 DCR960G26 10 9 Pulse Width us 100 200 500 1000 10000 Gate trigger voltage, VGT - (V) 8 7 Pulse Power PGM (Watts) Frequency Hz 50 100 150 150 150 150 150 150 150 100 20 - 400 150 125 100 25 - Upper Limit 6 5 Preferred gate drive area 4 3 2 o 1 Tj = -40oC Tj = 25oC Lower Limit Tj = 125 C 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Gate trigger current IGT, - (A) Fig12 Gate Characteristics 30 Lower Limit Upper Limit 5W 10W 20W 50W 100W 150W -40C Gate trigger voltage, VGT - (V) 25 20 15 10 5 0 0 1 2 3 4 5 6 Gate trigger current, IGT - (A) Fig. 13 Gate characteristics 7 8 9 10 DCR960G26 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 3rd ANGLE PROJECTION DO NOT SCALE IF IN DOUBT ASK HOLE Ø3.60 X 2.00 DEEP (IN BOTH ELECTRODES) 20° OFFSET (NOM.) TO GATE TUBE Device DCR803SG18 DCR806SG28 DCR818SG48 DCR820SG65 DCR1080G22 DCR960G26 DCR780G42 DCR690G52 DCR590G65 DCR470G85 Ø57.0 MAX Ø33.95 NOM Ø1.5 CATHODE GATE ANODE Ø33.95 NOM FOR PACKAGE HEIGHT SEE TABLE Clamping force: 11.5 kN ±10% Lead length: 420mm Lead terminal connector: M4 ring Package outline type code: G Fig.14 Package outline Maximum Minimum Thickness Thickness (mm) (mm) 26.415 25.865 26.49 25.94 26.84 26.17 27.1 26.55 26.415 25.865 26.49 25.94 26.72 26.17 26.84 26.29 27.1 26.55 27.46 26.91