CM200HG-130H Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts A D DETAIL “A” C H F E B G M K (4 PLACES) L (2 PLACES) J DETAIL “B” R T S V U Q P N W H V BB BB Z DD X DETAIL “A” Features: CC Y Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. £ Low Drive Power £ Low VCE(sat) £ Super-Fast Recovery AA DETAIL “B” Outline Drawing and Circuit Diagram Free-Wheel Diode £ Isolated Baseplate for Easy Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.51 140.0 Q 1.44 36.5 2.87 73.0 R 0.22 5.5 Applications: S 0.16 4.0 £ Traction £ Medium Voltage Drives £ High Voltage Power Supplies B C 1.89+0.04/-0.0 48.0+1.0/-0.0 D 4.88 124.0 T 0.68 17.4 E 2.24 57.0 U 1.61 41.0 F 0.85 21.6 V 0.24 6.0 G 0.51 12.9 W 2.44 62.0 H 0.20 5.0 X 0.47 12.0 J 1.73 44.0 Y 0.14 3.5 K M6 Metric M6 Z 0.11 2.8 L M8 Metric M8 AA 0.06 1.6 M 0.64 16.2 BB 0.02 0.5 N 1.59 40.4 CC 0.05 Dia. 1.2 Dia. P 1.10 28.0 DD 10° 10° 8/05 Heat Sinking Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200HG-130H is a 6500V (VCES), 200 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 130 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM200HG-130H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Operating Temperature Topr -40 to 125 °C Collector-Emitter Voltage (VGE = 0V, Tj = -40°C) VCES 5800 Volts Collector-Emitter Voltage (VGE = 0V, Tj = +25°C) VCES 6300 Volts Collector-Emitter Voltage (VGE = 0V, Tj = +125°C) VCES 6500 Volts Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts Collector Current (DC, Tc = 80°C) IC 200 Amperes Peak Collector Current (Pulse) ICM 400* Amperes Emitter Current** (Tc = 25°C) IE 200 Amperes Emitter Surge Current** (Pulse) IEM 400* Amperes Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj(max) ≤ 125°C) PC 2900 Watts Partial Discharge (V1 = 6900 Vrms, V2 = 5100 Vrms, 60 Hz (Acc. to IEC 1287)) Qpd 10 pC Max. Mounting Torque M8 Main Terminal Screws – 133 in-lb Max. Mounting Torque M6 Mounting Screws – 53 in-lb Module Weight (Typical) – 0.52 kg Viso 10200 Volts – 400 Amperes – 10 µs – 1200 kW Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) Maximum Turn-Off Switching Current (VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C) Short Circuit Capability, Maximum Pulse Width (VCC ≤ 4500V, VGE = ±15V, RG(off) ≥ 72Ω, Tj = 125°C) Maximum Reverse Recovery Instantaneous Power (VCC ≤ 4500V, die/dt ≤ 1000A/μs, Tj = 125°C) * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Toprmax rating (125°C). **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 8/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current* Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol ICES Test Conditions Min. Typ. Max. Units VCE = VCES, VGE = 0V, Tj = 25°C – – 3.0 mA VCE = VCES, VGE = 0V, Tj = 125°C – 10 30.0 mA VGE(th) IC = 20mA, VCE = 10V 5.0 6.0 7.0 Volts IGES VGE = VGES, VCE = 0V – – 0.5 µA VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 5.1 – Volts IC = 200A, VGE = 15V, Tj = 125°C – 5.0 – Volts Input Capacitance Cies VCE = 10V, VGE = 0V, – 41.0 – nF Output Capacitance Coes f = 100kHz, – 2.5 – nF Reverse Transfer Capacitance Cres Tj = 25°C – 0.7 – nF Total Gate Charge QG VCC = 3600V, IC = 200A, VGE = 15V – 3.3 – µC Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V, Tj = 25°C – 4.0 – Volts IE = 200A, VGE = 0V, Tj = 125°C – 3.6 – Volts Turn-On Delay Time td(on) VCC = 3600V, IC = 200A, – 1.2 – µs Turn-On Rise Time tr VGE1 = -VGE2 = 15V, RG(on) = 30Ω, – 0.35 – µs Turn-On Switching Energy Eon Tj = 125°C, toff = 60µs, Inductive Load – 1.5 – J/P Turn-Off Delay Time td(off) VCC = 3600V, IC = 200A, – 6.6 – µs Turn-Off Fall Time 1 tf1 VGE1 = -VGE2 = 15V, – 0.5 – µs Turn-Off Fall Time 2 tf2 RG(off) = 72Ω, – 3.3 – µs Turn-Off Switching Energy Eoff Tj = 125°C, toff = 60µs, Inductive Load – 1.2 – J/P Reverse Recovery Time 1** trr1 VCC = 3600V, IE = 200A, – 1.0 – µs Reverse Recovery Time 2** trr2 die/dt = -670A/μs, – 2.4 – µs Reverse Recovery Charge** Qrr Tj = 125°C, – 370 – µC Reverse Recovery Energy** Erec toff = 60µs, Inductive Load – 0.7 – J/P Min. Typ. Max. Units * Pulse width and repetition rate should be such that device junction temperature rise is negligible. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Thermal Resistance, Junction to Case Rth(j-c) Q Per IGBT – – 42.0 K/kW Thermal Resistance, Junction to Case Rth(j-c) D Per FWDi – – 66.0 K/kW Rth(c-f) Per Module, Thermal Grease Applied – 18.0 – K/kW Contact Thermal Resistance, Case to Fin Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units CTI – 600 – – – Clearance – – 26.0 – – mm Creepage Distance – – 56.0 – – mm Comparative Tracking Index Internal Inductance LC-E(int) – – 54.0 – µH Internal Lead Resistance RC-E(int) – – – – mΩ 8/05 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts OUTPUT CHARACTERISTICS (TYPICAL) 15V 18V 1600 14V VGE = 20V 13V 1200 12V 800 10V 400 0 4 8 12 16 20 5 4 3 2 1 0 0 100 200 300 500 0.8 0.6 0.4 0.2 0 0 100 200 300 400 500 FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARGE CHARACTERISTICS (TYPICAL) 0.8 0.6 0.4 0.2 0 100 200 300 400 500 1.2 1.2 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 1.0 0.8 REVERSE RECOVERY CHARGE, Qrr, (mC) VCC = 3600V VGE = ±15V RG(on) = 30Ω LS = 200nH Tj = 125°C 1.0 0.6 0.4 0.2 0 0 20 40 60 80 100 0.4 0.2 0 20 40 60 80 100 GATE RESISTANCE, RG, (Ω) TRANSFER CHARACTERISTICS (TYPICAL) TURN-OFF DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) TURN-ON DELAY TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME, td(off), (µs) 2500 2000 1500 1000 5 10 15 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 100 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 10-1 101 120 101 500 0 0.6 GATE RESISTANCE, RG, (Ω) 101 3000 0.8 0 120 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 1.0 EMITTER CURRENT, IE, (AMPERES) VCE = 20V Tj = 25°C Tj = 125°C 3500 0 400 VCC = 3600V VGE = ±15V RG(on) = 30Ω LS = 200nH Tj = 125°C 1.0 EMITTER CURRENT, IE, (AMPERES) REVERSE RECOVERY ENERGY, Erec, (J/PULSE) REVERSE RECOVERY CHARGE, Qrr, (mC) COLLECTOR CURRENT, IC, (AMPERES) 6 1.2 EMITTER CURRENT, IE, (AMPERES) 4000 4 VGE = 0V Tj = 25°C Tj = 125°C 7 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) 1.2 0 8 SWITCHING TIME, td(on), (µs) 0 FREE-WHEEL DIODE REVERSE RECOVERY ENERGY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY ENERGY, Erec, (J/PULSE) 16V Tj = 25°C COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 2000 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 COLLECTOR CURRENT, IC, (AMPERES) 103 100 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 10-1 101 102 103 COLLECTOR CURRENT, IC, (AMPERES) 8/05 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200HG-130H Single IGBTMOD™ HVIGBT Module 200 Amperes/6500 Volts RISE TIME VS. COLLECTOR CURRENT (TYPICAL) FALL TIME VS. COLLECTOR CURRENT (TYPICAL) 101 100 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 10-1 101 102 1.0 0.5 0 103 0 100 200 300 400 SWITCHING LOSS (OFF) VS. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (ON) VS. GATE RESISTANCE (TYPICAL) 0.5 100 200 300 400 3.0 2.5 2.0 1.5 1.0 0.5 0 500 3.5 SWITCHING LOSS, Eon, (J/PULSE) 1.0 0 20 40 60 80 100 3.0 2.5 2.0 1.5 1.0 0.5 0 120 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 0 20 40 60 80 100 COLLECTOR CURRENT, IC, (AMPERES) GATE RESISTANCE, RG, (Ω) GATE RESISTANCE, RG, (Ω) CAPACITANCE VS. COLLECTOR-EMITTER VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDI) 101 Coes 100 Cres VGE = 15V f = 100kHz Tj = 25°C 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 1.2 8 VGE = 15V Tj = 25°C Tj = 125°C 7 6 TRANSIENT IMPEDANCE, Rth(j-c) COLLECTOR-EMITTER VOLTAGE, VCES, (VOLTS) Cies 5 4 3 2 1 0 500 4.0 VCC = 3600V VGE = ±15V IC = 200A LS = 200nH Tj = 125°C 3.5 1.5 10-1 10-1 1.5 SWITCHING LOSS (ON) VS. COLLECTOR CURRENT (TYPICAL) 2.0 0 2.0 COLLECTOR CURRENT, IC, (AMPERES) SWITCHING LOSS, Eoff, (J/PULSE) SWITCHING LOSS, Eon, (J/PULSE) 2.5 2.5 COLLECTOR CURRENT, IC, (AMPERES) 102 CAPACITANCE, Cies, Coes, Cres, (pF) 102 4.0 3.0 8/05 100 3.0 COLLECTOR CURRENT, IC, (AMPERES) VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 3.5 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C 3.5 10-1 101 103 4.0 0 4.0 VCC = 3600V VGE = ±15V RG(off) = 72Ω RG(on) = 30Ω LS = 200nH Tj = 125°C SWITCHING LOSS, Eoff, (J/PULSE) SWITCHING TIME, tr, (µs) SWITCHING TIME, tf, (µs) 101 SWITCHING LOSS (OFF) VS. COLLECTOR CURRENT (TYPICAL) 0 100 200 300 400 COLLECTOR CURRENT, IC, (AMPERES) 500 1.0 0.8 120 SINGLE PULSE TC = 25°C IGBT = Rth(j-c)Q = 42°K/kW FWDI = Rth(j-c)D = 66°K/kW 0.6 0.4 0.2 0 10-3 10-2 10-1 100 101 TIME, (s) 5