CM400DU-24NFH Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com Dual IGBTMOD™ NFH-Series Module 400 Amperes/1200 Volts A M M D V E2 G2 L H J C2E1 E2 C1 G1 E1 E U W B H R N Y X L Q Q AC P AD S - NUTS (3 TYP) T - (4 TYP) Z K G G Z K V AA Z K AB M C F LABEL G2 E2 C2E1 Di1 Tr2 E2 Tr1 C1 Di2 E1 G1 Tolerance Otherwise Specified (mm) Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Outline Drawing and Circuit Diagram DimensionsInches Millimeters A 4.33 110.0 B 3.15 80.0 C 1.14+0.04/-0.0129.0+1.0/-0.5 D 3.66±0.01 93.0±0.25 E 2.44±0.01 62.0±0.25 F 0.83 21.2 G 0.28 7.0 H 0.24 6.0 J 0.59 15.0 K 0.55 14.0 L 0.35 9.0 M 0.33 8.5 N 0.69 17.5 P 0.85 21.5 DimensionsInches Millimeters Q 0.98 25.0 R 1.23 31.4 S M6 Metric M6 T 0.26 Dia. 6.5 Dia. U 0.4 10.0 V 0.16 4.0 W 0.87 22.2 X 0.72 18.25 Y 0.36 9.25 Z 0.71 18.0 AA 0.11 2.8 AB 0.29 7.5 AC 0.21 5.3 AD 0.47 12.0 Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: £ Low ESW(off) £ Discrete Super-Fast Recovery Free-Wheel Diode £ Isolated Baseplate for Easy Heat Sinking Applications: £ Power Supplies £ Induction Heating £ Welders Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400DU-24NFH is a 1200V (VCES), 400 Ampere Dual IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM400 24 7/11 Rev. 2 1 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFH Dual IGBTMOD™ NFH-Series Module 400 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings SymbolCM400DU-24NFHUnits Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E Short) VCES 1200Volts Gate-Emitter Voltage (C-E Short) VGES ±20Volts Collector Current (TC = 25°C) Peak Collector Current IC 400*Amperes ICM 800*Amperes Emitter Current** (TC = 25°C) Peak Emitter Current** IE 400*Amperes IEM 800*Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 1040Watts Maximum Collector Dissipation (TC' = 25°C, Tj' ≤ 150°C) PC 2500Watts Mounting Torque, M6 Main Terminal — 40 in-lb Mounting Torque, M6 Mounting — 40 in-lb — 580Grams Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500Volts Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 1.4 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts IC = 400A, VGE = 15V, Tj = 125°C — 5.0 — Volts Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V — 1800 — nC Emitter-Collector Voltage** VEC IE = 400A, VGE = 0V — — 3.5 Volts Min. Typ. Max. Units — — 63 nF — — 5.3 nF — — 1.2 nF Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time Switch Turn-off Delay Time Time Fall Time Test Conditions VCE = 10V, VGE = 0V — — 300 ns tr VCC = 600V, IC = 400A, — — 100 ns td(off) VGE1 = VGE2 = 15V, RG = 0.78Ω, — — 500 ns tf Inductive Load — — 150 ns Diode Reverse Recovery Time** trr Switching Operation, — — 250 ns Diode Reverse Recovery Charge** Qrr IE = 400A — 16 — µC * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 7/11 Rev. 2 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFH Dual IGBTMOD™ NFH-Series Module 400 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, TC Reference — — 0.12 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.23 °C/W Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, — — 0.051 °C/W Thermal Resistance, Junction to Case Rth(j-c)'D Per FWDi 1/2 Module, TC Reference — — 0.093 °C/W Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.02 — °C/W 0.78 — 7.8 Ω Point per Outline Drawing Point per Outline Drawing TC Reference Point Under Chips Point per Outline Drawing Contact Thermal Resistance External Gate Resistance RG OUTPUT CHARACTERISTICS (TYPICAL) 13 600 12 400 11 10 200 9 0 8 0 2 4 6 8 600 400 200 0 10 9 VGE = 10V Tj = 25°C Tj = 125°C 5 0 10 15 7 6 5 4 3 2 1 0 20 VGE = 15V Tj = 25°C Tj = 125°C 8 0 200 400 600 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 800A 8 6 IC = 400A 4 IC = 160A 2 0 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 7/11 Rev. 2 20 103 Tj = 25°C Tj = 125°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) 10 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 800 14 VGE = 20V COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 102 101 0 1 2 3 4 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 5 800 VGE = 0V 102 Cies 101 Coes 100 Cres 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com CM400DU-24NFH Dual IGBTMOD™ NFH-Series Module 400 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) tr 101 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load 102 101 102 102 102 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive Load 101 101 103 VCC = 400V VCC = 600V 12 8 4 0 0 500 1000 1500 2000 2500 GATE CHARGE, QG, (nC) SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) 100 101 102 103 102 102 100 10-1 Err NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth • (NORMALIZED VALUE) 102 100 10-1 101 VCC = 600V VGE = ±15V IE = 400A Tj = 125°C Inductive Load C Snubber at Bus 100 GATE RESISTANCE, RG, (Ω) VCC = 600V VGE = ±15V IC = 400A Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 101 100 101 101 10-2 10-3 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 Err 101 100 101 VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load C Snubber at Bus 102 103 EMITTER CURRENT, IE, (AMPERES) GATE RESISTANCE, RG, (Ω) REVERSE RECOVERY SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) 16 EMITTER CURRENT, IE, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 4 IC = 400A COLLECTOR CURRENT, IC, (AMPERES) VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive Load C Snubber at Bus ESW(on) ESW(off) 100 10-1 101 103 102 REVERSE RECOVERY SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 100 101 Irr trr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) td(on) tf 102 SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) SWITCHING TIME, (ns) td(off) GATE CHARGE VS. VGE 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 103 103 101 10-1 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.12°C/W (IGBT) Rth(j-c) = 0.23°C/W (FWDi) 10-2 10-5 10-4 10-3 10-3 TIME, (s) 7/11 Rev. 2