SHENZHENFREESCALE AO4490

AO4490
30V N-Channel MOSFET
General Description
The AO4490 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and
operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected.
This device is suitable for use as a load switch and general purpose applications.
Features
VDS (V) = 30V
ID = 16A
(VGS = 10V)
RDS(ON) < 7.2mΩ (VGS = 10V)
RDS(ON) < 10mΩ (VGS = 4.5V)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
AF
Current
TA=70°C
G
Repetitive avalanche energy L=0.3mH
TA=25°C
Power Dissipation
G
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
1/6
±20
V
ID
13
IDM
120
IAR
30
A
EAR
135
mJ
W
1.8
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
A
2.8
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
16
Pulsed Drain Current B
Avalanche Current
Maximum
30
RθJA
RθJL
Typ
32
62
18
°C
Max
45
75
24
Units
°C/W
°C/W
°C/W
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AO4490
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
ID=250µA, VGS=0V
Min
Typ
30
37
VDS=30V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
120
TJ=55°C
VGS=10V, ID=16A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=12A
gFS
Forward Transconductance
VDS=5V, ID=16A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
VGS=0V, VDS=0V, f=1MHz
µA
10
µA
1.8
2.5
V
6
7.2
8.5
10
8
10
mΩ
1.0
V
4
A
2170
pF
A
55
0.70
1803
VGS=0V, VDS=15V, f=1MHz
Units
V
1
IDSS
RDS(ON)
Max
mΩ
S
387
pF
238
pF
Ω
1.3
2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
36
48
Qg(4.5V) Total Gate Charge
19
nC
3.9
nC
8.7
nC
7.6
ns
6.4
ns
27
ns
8.5
ns
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=16A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=16A, dI/dt=100A/µs
27
Qrr
Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs
17
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=1Ω,
RGEN=3Ω
33
nC
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4490
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
30
10V
4.5V
4V
5V
VDS=5V
25
90
20
VGS=3.5V
ID(A)
ID (A)
6V
60
125°
15
25°C
10
30
3V
-40°C
5
0
0
0
1
2
3
4
5
1
1.5
VDS (Volts)
Figure 1: On-Region Characteristics
Normalized On-Resistance
8.0
RDS(ON) (mΩ )
3
3.5
4
1.6
VGS=4.5V
6.0
VGS=10V
4.0
2.0
VGS=10V
ID=16A
1.4
1.2
VGS=4.5V
ID=12A
1
0.8
0.6
0
5
10
15
20
25
30
-60
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-30
0
30
60
90
120
150
180
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
20
1.0E+02
1.0E+01
ID=16
15
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ )
2.5
VGS(Volts)
Figure 2: Transfer Characteristics
10.0
125°C
10
25°C
1.0E-01
1.0E-02
-40°C
1.0E-03
5
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4490
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
10
VDS=15V
ID=16A
3000
Capacitance (pF)
VGS (Volts)
8
6
4
2500
Ciss
2000
1500
Coss
1000
2
Crss
500
0
0
0
10
20
30
40
0
5
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000.0
10
30
100
10µs
80
RDS(ON)
limited
10.0
10ms
100µ
10s
1ms
1.0
1s
DC
Power (W)
ID (Amps)
100.0
TJ(Max)=150°C
TA=25°C
0.1
0.0
0.01
0.1
TJ(Max)=150°C
TA=25°C
60
40
20
1
VDS (Volts)
10
0
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
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AO4490
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3
Power Dissipation (W)
TA=10S
2
1
TA=Steady-State
0
0
25
50
75
100
125
150
175
TAmbient (°C)
Figure 12: Power De-rating (Note A)
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AO4490
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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