AO4490 30V N-Channel MOSFET General Description The AO4490 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V, while retaining a 20V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a load switch and general purpose applications. Features VDS (V) = 30V ID = 16A (VGS = 10V) RDS(ON) < 7.2mΩ (VGS = 10V) RDS(ON) < 10mΩ (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current TA=70°C G Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation G Junction and Storage Temperature Range Maximum Junction-to-Lead C 1/6 ±20 V ID 13 IDM 120 IAR 30 A EAR 135 mJ W 1.8 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 2.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 16 Pulsed Drain Current B Avalanche Current Maximum 30 RθJA RθJL Typ 32 62 18 °C Max 45 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4490 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 37 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±16V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 120 TJ=55°C VGS=10V, ID=16A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=12A gFS Forward Transconductance VDS=5V, ID=16A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 5 VGS=0V, VDS=0V, f=1MHz µA 10 µA 1.8 2.5 V 6 7.2 8.5 10 8 10 mΩ 1.0 V 4 A 2170 pF A 55 0.70 1803 VGS=0V, VDS=15V, f=1MHz Units V 1 IDSS RDS(ON) Max mΩ S 387 pF 238 pF Ω 1.3 2 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 36 48 Qg(4.5V) Total Gate Charge 19 nC 3.9 nC 8.7 nC 7.6 ns 6.4 ns 27 ns 8.5 ns Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=16A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=16A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=16A, dI/dt=100A/µs 17 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1Ω, RGEN=3Ω 33 nC ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev4: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4490 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 30 10V 4.5V 4V 5V VDS=5V 25 90 20 VGS=3.5V ID(A) ID (A) 6V 60 125° 15 25°C 10 30 3V -40°C 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics Normalized On-Resistance 8.0 RDS(ON) (mΩ ) 3 3.5 4 1.6 VGS=4.5V 6.0 VGS=10V 4.0 2.0 VGS=10V ID=16A 1.4 1.2 VGS=4.5V ID=12A 1 0.8 0.6 0 5 10 15 20 25 30 -60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -30 0 30 60 90 120 150 180 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 20 1.0E+02 1.0E+01 ID=16 15 125°C 1.0E+00 IS (A) RDS(ON) (mΩ ) 2.5 VGS(Volts) Figure 2: Transfer Characteristics 10.0 125°C 10 25°C 1.0E-01 1.0E-02 -40°C 1.0E-03 5 25°C 1.0E-04 1.0E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4490 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3500 10 VDS=15V ID=16A 3000 Capacitance (pF) VGS (Volts) 8 6 4 2500 Ciss 2000 1500 Coss 1000 2 Crss 500 0 0 0 10 20 30 40 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000.0 10 30 100 10µs 80 RDS(ON) limited 10.0 10ms 100µ 10s 1ms 1.0 1s DC Power (W) ID (Amps) 100.0 TJ(Max)=150°C TA=25°C 0.1 0.0 0.01 0.1 TJ(Max)=150°C TA=25°C 60 40 20 1 VDS (Volts) 10 0 0.0001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4/6 www.freescale.net.cn AO4490 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 Power Dissipation (W) TA=10S 2 1 TA=Steady-State 0 0 25 50 75 100 125 150 175 TAmbient (°C) Figure 12: Power De-rating (Note A) 5/6 www.freescale.net.cn AO4490 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn