AO4588 30V N-Channel MOSFET General Description The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications. Features VDS 30V ID (at VGS=10V) 20A RDS(ON) (at VGS=10V) < 4.8mΩ RDS(ON) (at VGS =4.5V) < 6.2mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25°C ±20 V A 15.5 Pulsed Drain Current C IDM Avalanche Current C IAS, IAR 45 A Avalanche energy L=0.1mH C TA=25°C EAS, EAR 101 mJ Power Dissipation B Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 140 3.1 PD TA=70°C Junction and Storage Temperature Range 1/6 Units V 20 ID TA=70°C Maximum 30 TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL -55 to 150 Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4588 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions ID=250µA, VGS=0V Min Typ 30 36 Max V VDS=30V, VGS=0V 1 TJ=55°C 5 VDS=0V, VGS= ±16V 10 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 140 VGS=10V, ID=20A Units 1.85 2.4 µA µA V A 3.95 4.8 6 7.3 VGS=4.5V, ID=16A 4.9 6.2 mΩ VDS=5V, ID=20A 85 1 V 4.5 A RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance mΩ S 1950 2445 2940 pF 270 390 510 pF 130 220 310 pF 1.2 2.4 3.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 32 41 50 nC Qg(4.5V) Total Gate Charge 15 19 24 Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A nC 7.2 nC Qgd Gate Drain Charge 6.6 nC tD(on) Turn-On DelayTime 7 ns tr Turn-On Rise Time 5 ns tD(off) Turn-Off DelayTime 41.5 ns tf Turn-Off Fall Time 10.5 ns VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 17.5 22 31 40 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4588 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 10V VDS=5V 3.5V 4V 80 60 4.5V ID(A) ID (A) 60 3V 40 40 125°C 20 20 25°C VGS=2.5V 0 0 0 1 2 3 4 0 5 1 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 1.8 VGS=4.5V 5 RDS(ON) (mΩ ) 2 4 VGS=10V 3 VGS=10V ID=20A 1.6 1.4 17 5 2 VGS=4.5V 10 1.2 ID=16A 1 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 12 1.0E+02 ID=20A 1.0E+01 10 40 8 IS (A) RDS(ON) (mΩ ) 1.0E+00 125°C 125°C 1.0E-01 1.0E-02 6 25°C 1.0E-03 4 1.0E-04 25°C 1.0E-05 2 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4588 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3600 10 VDS=15V ID=20A 3200 Ciss 2800 Capacitance (pF) VGS (Volts) 8 6 4 2400 2000 1600 1200 Coss 800 2 400 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 50 0 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1000.0 TA=25°C 100.0 TA=100°C TA=150°C TA=125°C 10 10µs RDS(ON) limited 100 ID (Amps) IAR (A) Peak Avalanche Current Crss 0 100µs 10.0 1m 10ms 1.0 TJ(Max)=150°C TA=25°C 0.1 10s DC 0.0 1 0.01 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4588 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) 5/6 www.freescale.net.cn AO4588 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn