AO4614B 40V Dual P + N-Channel MOSFET General Description The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features N-Channel VDS (V) = 40V, ID = 6A (VGS=10V) RDS(ON) < 30mΩ (VGS=10V) < 38mΩ (VGS=4.5V) P-Channel -40V -5A (VGS=-10V) < 45mΩ (VGS= -10V) < 63mΩ (VGS= -4.5V) SOIC-8 D2 D1 Top View S2 G2 S1 G1 1 2 3 4 D2 D2 D1 D1 8 7 6 5 G2 G1 S2 S1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Max n-channel 40 VGS TA=25°C Continuous Drain Current A TA=70°C Pulsed Drain Current B p-channel Max p-channel -40 ±20 ±20 6 -5 ID 5 -4 IDM 30 -30 Units V V A B IAR 14 -20 Repetitive avalanche energy L=0.1mH B EAR 9.8 20 2 2 1.28 1.28 -55 to 150 -55 to 150 Avalanche Current Power Dissipation TA=25°C TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C 1/7 Symbol RθJA RθJL RθJA RθJL mJ W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 50 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 50 °C/W °C/W °C/W www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 30 ±100 VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A 2.5 3 24 30 36 45 30 38 Forward Transconductance VDS=5V, ID=6A 19 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 410 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=20V, ID=6A VGS=10V, VDS=20V, RL=3.3Ω, RGEN=3Ω Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs nA V mΩ S 516 1 V 2 A 650 pF 82 pF 43 pF 4.6 Ω 8.9 10.8 nC 4.3 5.6 nC 2.4 nC 1.4 nC 6.4 ns 3.6 ns 16.2 ns 6.6 IF=6A, dI/dt=100A/µs µA A gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=40V, VGS=0V VGS(th) RDS(ON) Typ 18 10 ns 24 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 12 D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev2 : Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 2/7 www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 30 10V 35 VDS=5V 5V 25 30 4.5V 20 4V ID(A) ID (A) 25 20 15 15 10 10 125°C VGS=3.5V 25°C 5 5 0 0 0 1 2 3 4 5 2 2.5 VDS (Volts) Fig 1: On-Region Characteristics Normalized On-Resistance VGS=4.5V 32 RDS(ON) (mΩ ) 4 4.5 1.8 34 30 28 26 VGS=10V 24 22 20 1.6 VGS=10V ID=6A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 0.6 0 5 10 15 -50 20 80 100 ID=6A 70 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 9 12 10 60 1 50 IS (A) RDS(ON) (mΩ ) 3.5 VGS(Volts) Figure 2: Transfer Characteristics 36 125°C 0.1 40 125°C 25°C 0.01 25°C 30 0.001 20 0.0001 10 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/7 3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 800 10 VDS=20V ID= 6A Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 600 400 Crss 200 Coss 0 0 0 2 4 6 8 0 10 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 0.1s 1s 10s 0.1 TJ(Max)=150°C TA=25°C DC Power (W) ID (Amps) 10 1 10 10 1 0.00001 0.01 0.1 100 100 0.001 0.1 10 1000 VDS (Volts) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 9 12 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4/7 www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID= -250µA, VGS=0V -40 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID= -250µA -1.7 ID(ON) On state drain current VGS= -10V, VDS= -5V -30 ±100 VGS= -10V, ID= -5A Static Drain-Source On-Resistance TJ=125°C VGS= -4.5V, ID= -4A gFS Forward Transconductance VDS= -5V, ID= -5A VSD Diode Forward Voltage IS= -1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance -2 -3 36 45 52 65 50 63 13 µA nA V mΩ S 940 -1 V -2 A 1175 pF 97 pF 72 pF VGS=0V, VDS=0V, f=1MHz 14 Ω 17 22 nC VGS= -10V, VDS= -20V, ID= -5A 7.9 10 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF= -5A, dI/dt=100A/µs 21 Qrr Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Time Units A -0.76 750 VGS=0V, VDS= -20V, f=1MHz SWITCHING PARAMETERS Qg (-10V) Total Gate Charge Qg (-4.5V) Total Gate Charge Max V VDS= -40V, VGS=0V VGS(th) RDS(ON) Typ VGS= -10V, VDS= -20V, RL=4Ω, RGEN=3Ω 3.4 nC 3.2 nC 6.2 ns 8.4 ns 44.8 ns 41.2 ns 27 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with 2 A:T The value of R θJA isinmeasured the device mounted FR-4 board board with 2oz. Copper, a still rating air environment with any givenwith application depends onon the1in user's specific design. The in current is based on theT A =25°C. A =25°C. The value The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal t ≤ 10s thermal resistance rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 B: rating, pulse limitedimpedence by junction from temperature. the sum of width the thermal junction to lead R θJL and lead to ambient. C.Repetitive The R θJA is 12 C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained2 using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with E. with the devicepulse mounted on. 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The =25°C.tests The are SOAperformed curve provides a single rating T AThese SOA Rev1curve : Janprovides 2010 a single pulse rating. 5/7 www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 30 VDS=-5V -10V 25 -5V -4V -4.5V 20 -ID(A) 20 -ID (A) 25 15 VGS=-3.5V 10 15 10 5 125°C 5 0 25°C 0 0 1 2 3 4 5 1.5 -VDS (Volts) Fig 12: On-Region Characteristics 2.5 3 3.5 4 4.5 -VGS(Volts) Figure 13: Transfer Characteristics 1.7 Normalized On-Resistance 65 60 VGS=-4.5V 55 RDS(ON) (mΩ ) 2 50 45 40 VGS=-10V 35 VGS=-10V ID=-5A 1.5 1.3 1.1 VGS=-4.5V ID=-4A 0.9 0.7 30 0 5 10 15 -50 20 -ID (A) Figure 14: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 Temperature (°C) Figure 15: On-Resistance vs. Junction Temperature 130 100 ID=-5A 9 12 10 110 -IS (A) RDS(ON) (mΩ ) 1 90 70 125°C 50 25°C 0.01 0.001 25°C 0.0001 30 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 16: On-Resistance vs. Gate-Source Voltage 6/7 125°C 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 17: Body-Diode Characteristics www.freescale.net.cn AO4614B 40V Dual P + N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1400 VDS=-20V ID= -5A 1200 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 400 2 Crss Coss 200 0 0 0 3 6 9 12 15 0 18 10 20 30 40 -VDS (Volts) Figure 19: Capacitance Characteristics Qg (nC) Figure 18: Gate-Charge Characteristics 1000 100 TJ(Max)=150°C TA=25°C 10µs 100µs 1 RDS(ON) limited 1ms 10ms 0.1s 1s 10s 0.1 TJ(Max)=150°C TA=25°C DC 100 Power (W) -ID (Amps) 10 10 0.01 0.1 1 10 1 0.00001 100 0.1 10 1000 Pulse Width (s) Figure 21: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) Figure 20: Maximum Forward Biased Safe Operating Area (Note E) 9 12 10 Zθ JA Normalized Transient Thermal Resistance 0.001 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=74°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 22: Normalized Maximum Transient Thermal Impedance 7/7 www.freescale.net.cn