SHENZHENFREESCALE AO4614B

AO4614B
40V Dual P + N-Channel MOSFET
General Description
The AO4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate
charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
Features
N-Channel
VDS (V) = 40V,
ID = 6A (VGS=10V)
RDS(ON)
< 30mΩ (VGS=10V)
< 38mΩ (VGS=4.5V)
P-Channel
-40V
-5A (VGS=-10V)
< 45mΩ (VGS= -10V)
< 63mΩ (VGS= -4.5V)
SOIC-8
D2
D1
Top View
S2
G2
S1
G1
1
2
3
4
D2
D2
D1
D1
8
7
6
5
G2
G1
S2
S1
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Max n-channel
40
VGS
TA=25°C
Continuous Drain
Current A
TA=70°C
Pulsed Drain Current B
p-channel
Max p-channel
-40
±20
±20
6
-5
ID
5
-4
IDM
30
-30
Units
V
V
A
B
IAR
14
-20
Repetitive avalanche energy L=0.1mH B
EAR
9.8
20
2
2
1.28
1.28
-55 to 150
-55 to 150
Avalanche Current
Power Dissipation
TA=25°C
TA=70°C
Junction and Storage Temperature Range
PD
TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
1/7
Symbol
RθJA
RθJL
RθJA
RθJL
mJ
W
°C
Device
n-ch
n-ch
n-ch
Typ
48
74
35
Max
62.5
110
50
Units
°C/W
°C/W
°C/W
p-ch
p-ch
p-ch
48
74
35
62.5
110
50
°C/W
°C/W
°C/W
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AO4614B
40V Dual P + N-Channel MOSFET
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
±100
VGS=10V, ID=6A
TJ=125°C
VGS=4.5V, ID=5A
2.5
3
24
30
36
45
30
38
Forward Transconductance
VDS=5V, ID=6A
19
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
410
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=20V,
ID=6A
VGS=10V, VDS=20V, RL=3.3Ω,
RGEN=3Ω
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
nA
V
mΩ
S
516
1
V
2
A
650
pF
82
pF
43
pF
4.6
Ω
8.9
10.8
nC
4.3
5.6
nC
2.4
nC
1.4
nC
6.4
ns
3.6
ns
16.2
ns
6.6
IF=6A, dI/dt=100A/µs
µA
A
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
18
10
ns
24
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
9
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
12
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2 : Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
2/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
40
30
10V
35
VDS=5V
5V
25
30
4.5V
20
4V
ID(A)
ID (A)
25
20
15
15
10
10
125°C
VGS=3.5V
25°C
5
5
0
0
0
1
2
3
4
5
2
2.5
VDS (Volts)
Fig 1: On-Region Characteristics
Normalized On-Resistance
VGS=4.5V
32
RDS(ON) (mΩ )
4
4.5
1.8
34
30
28
26
VGS=10V
24
22
20
1.6
VGS=10V
ID=6A
1.4
1.2
VGS=4.5V
ID=5A
1
0.8
0.6
0
5
10
15
-50
20
80
100
ID=6A
70
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
9
12
10
60
1
50
IS (A)
RDS(ON) (mΩ )
3.5
VGS(Volts)
Figure 2: Transfer Characteristics
36
125°C
0.1
40
125°C
25°C
0.01
25°C
30
0.001
20
0.0001
10
3
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/7
3
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
800
10
VDS=20V
ID= 6A
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
600
400
Crss
200
Coss
0
0
0
2
4
6
8
0
10
10
20
30
40
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
0.1
TJ(Max)=150°C
TA=25°C
DC
Power (W)
ID (Amps)
10
1
10
10
1
0.00001
0.01
0.1
100
100
0.001
0.1
10
1000
VDS (Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
9
12
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/7
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AO4614B
40V Dual P + N-Channel MOSFET
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID= -250µA, VGS=0V
-40
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID= -250µA
-1.7
ID(ON)
On state drain current
VGS= -10V, VDS= -5V
-30
±100
VGS= -10V, ID= -5A
Static Drain-Source On-Resistance
TJ=125°C
VGS= -4.5V, ID= -4A
gFS
Forward Transconductance
VDS= -5V, ID= -5A
VSD
Diode Forward Voltage
IS= -1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
-2
-3
36
45
52
65
50
63
13
µA
nA
V
mΩ
S
940
-1
V
-2
A
1175
pF
97
pF
72
pF
VGS=0V, VDS=0V, f=1MHz
14
Ω
17
22
nC
VGS= -10V, VDS= -20V,
ID= -5A
7.9
10
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF= -5A, dI/dt=100A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF= -5A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Time
Units
A
-0.76
750
VGS=0V, VDS= -20V, f=1MHz
SWITCHING PARAMETERS
Qg (-10V) Total Gate Charge
Qg (-4.5V) Total Gate Charge
Max
V
VDS= -40V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS= -10V, VDS= -20V, RL=4Ω,
RGEN=3Ω
3.4
nC
3.2
nC
6.2
ns
8.4
ns
44.8
ns
41.2
ns
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
2
A:T The
value of R θJA isinmeasured
the device
mounted
FR-4
board board
with 2oz.
Copper,
a still rating
air environment
with
any givenwith
application
depends
onon
the1in
user's
specific
design.
The in
current
is based on
theT A =25°C.
A =25°C. The value
The
value
in
any
a
given
application
depends
on
the
user's
specific
board design. The current rating is based on the t ≤ 10s thermal
t ≤ 10s thermal resistance rating.
resistance
rating.
B: Repetitive
rating, pulse width limited by junction temperature.
9
B:
rating,
pulse
limitedimpedence
by junction from
temperature.
the sum
of width
the thermal
junction to lead R θJL and lead to ambient.
C.Repetitive
The R θJA is
12
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max.
D. The static characteristics in Figures 1 to 6,12,14 are obtained2 using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with
E.
with the
devicepulse
mounted
on. 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
=25°C.tests
The are
SOAperformed
curve provides
a single
rating
T AThese
SOA
Rev1curve
: Janprovides
2010 a single pulse rating.
5/7
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30
30
VDS=-5V
-10V
25
-5V
-4V
-4.5V
20
-ID(A)
20
-ID (A)
25
15
VGS=-3.5V
10
15
10
5
125°C
5
0
25°C
0
0
1
2
3
4
5
1.5
-VDS (Volts)
Fig 12: On-Region Characteristics
2.5
3
3.5
4
4.5
-VGS(Volts)
Figure 13: Transfer Characteristics
1.7
Normalized On-Resistance
65
60
VGS=-4.5V
55
RDS(ON) (mΩ )
2
50
45
40
VGS=-10V
35
VGS=-10V
ID=-5A
1.5
1.3
1.1
VGS=-4.5V
ID=-4A
0.9
0.7
30
0
5
10
15
-50
20
-ID (A)
Figure 14: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 15: On-Resistance vs. Junction
Temperature
130
100
ID=-5A
9
12
10
110
-IS (A)
RDS(ON) (mΩ )
1
90
70
125°C
50
25°C
0.01
0.001
25°C
0.0001
30
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 16: On-Resistance vs. Gate-Source Voltage
6/7
125°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 17: Body-Diode Characteristics
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AO4614B
40V Dual P + N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10
1400
VDS=-20V
ID= -5A
1200
Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
1000
800
600
400
2
Crss
Coss
200
0
0
0
3
6
9
12
15
0
18
10
20
30
40
-VDS (Volts)
Figure 19: Capacitance Characteristics
Qg (nC)
Figure 18: Gate-Charge Characteristics
1000
100
TJ(Max)=150°C
TA=25°C
10µs
100µs
1
RDS(ON)
limited
1ms
10ms
0.1s
1s
10s
0.1
TJ(Max)=150°C
TA=25°C
DC
100
Power (W)
-ID (Amps)
10
10
0.01
0.1
1
10
1
0.00001
100
0.1
10
1000
Pulse Width (s)
Figure 21: Single Pulse Power Rating Junctionto-Ambient (Note E)
-VDS (Volts)
Figure 20: Maximum Forward Biased Safe
Operating Area (Note E)
9
12
10
Zθ JA Normalized Transient
Thermal Resistance
0.001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=74°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 22: Normalized Maximum Transient Thermal Impedance
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