AO4420A 30V N-Channel MOSFET General Description The AO4420A uses advanced trench technology to provide excellent RDS(ON) shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications. Features VDS (V) = 30V , ID = 13.7A (VGS = 10V) RDS(ON) < 10.5mΩ (VGS = 10V) RDS(ON) < 12mΩ (VGS = 4.5V) SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain AF Current TA=70°C B Repetitive avalanche energy L=0.3mH TA=25°C Power Dissipation B Junction and Storage Temperature Range Maximum Junction-to-Lead C 1/4 ±12 V ID 9.7 IDM 60 IAR 20 A 60 mJ EAR W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 3.1 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Units V 13.7 Pulsed Drain Current B Avalanche Current Maximum 30 RθJA RθJL Typ 28 54 21 °C Max 40 75 30 Units °C/W °C/W °C/W www.freescale.net.cn AO4420A 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 40 Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=13.7A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Units V 30 VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=13.7A 100 nA 2 V 8.3 10.5 12.5 15 9.7 12 A mΩ mΩ 37 0.76 S 1 V 5 A 4050 pF 256 pF 168 pF 0.86 1.1 Ω 30.5 36 nC 4.6 Qgd Gate Drain Charge 8.6 tD(on) Turn-On DelayTime 5.5 tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=15V, RL=1.1Ω, RGEN=3Ω µA 1.1 3656 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs 1 5 VGS=4.5V, ID=12.7A Output Capacitance 0.004 TJ=55°C VGS=10V, ID=13.7A Coss Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ nC nC 9 ns 3.4 7 ns 49.8 75 ns 5.9 11 ns IF=13.7A, dI/dt=100A/µs 22.5 28 Body Diode Reverse Recovery Charge IF=13.7A, dI/dt=100A/µs 12.5 16 ns nC Body Diode Reverse Recovery Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev 1 : Nov. 2010 2/4 www.freescale.net.cn AO4420A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 10V VGS=5V 4.5V 50 25 VGS =2.5V 20 ID(A) ID(A) 40 30 125°C 15 10 20 25°C VGS =2.0V 5 10 0 0 0.0 0 1 2 3 4 0.5 5 1.0 1.5 2.0 2.5 3.0 VGS(Volts) Figure 2: Transfer Characteristics VDS(Volts) Figure 1: On-Regions Characteristics 1.8 Normalize ON-Resistance 12 11 RDS(ON)(mΩ ) VGS =4.5V 10 9 8 VGS =10V 7 ID=13.7A 1.6 VGS=4.5V 1.4 VGS=10V 1.2 1.0 0.8 0 6 0 5 10 15 20 25 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 30 1E+00 ID=13.7A 25 125°C IS(A) RDS(ON)(mΩ ) 1E-01 15 1E-02 1E-03 10 25°C 25°C 1E-04 5 1E-05 0 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 125°C 20 10 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AO4420A 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 5 VDS=15V ID=13.7A Ciss Capacitance (pF) VGS(Volts) 4 3 2 1000 Coss 1 Crss 100 0 0 10 20 30 0 40 10 15 20 25 30 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 50 100 10µs RDS(ON) limited 40 100µs ID(A) 0.1s 1s 1 1ms Power (W) 10ms 10 10s 20 DC 0.1 0.1 30 10 TJ(Max) =150°C TA =25°C 1 10 100 0 0.01 VDS(Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 Zθ JA Normalized Transient Thermal Resistance 5 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=40°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence 4/4 www.freescale.net.cn