AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO6808/L uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. AO6808 and AO6808L are electrically identical. -RoHS Compliant -AO6808L is Halogen Free Features VDS = 20V ID = 6A (VGS = 4.5V) RDS(ON) = 19mΩ (typical) (VGS = 4.5V) RDS(ON) = 20mΩ (typical) (VGS = 4.0V) RDS(ON) = 21mΩ (typical) (VGS = 3.1V) RDS(ON) = 23mΩ (typical) (VGS = 2.5V) D2 D1 TSOP6 Top View G1 S1 D1/D2 S2 1 6 2 5 3 4 G2 G1 D1/D2 G2 S2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±12 Continuous Drain Current A Pulsed Drain Current Power Dissipation A TA=25°C ID IDM TA=70°C B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C 1/4 TJ, TSTG Symbol A A t ≤ 10s Steady State Steady State 4.6 3.7 V A 60 PD TA=70°C 6 4.6 Units V RθJA RθJL 1.3 0.8 0.8 0.5 -55 to 150 Typ 76 118 54 Max 95 150 68 W °C Units °C/W °C/W °C/W www.freescale.net.cn AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = 250µA, VGS = 0V TJ = 55°C 5 ±10 µA 1 V 15 19 23 21 27 33 VGS = 4.0V, ID = 5.5A 15 20 25 mΩ VGS = 3.1V, ID = 5A 16 21 27 mΩ VGS = 2.5V, ID = 2A 17 23 30 mΩ 1 V 1.3 A 780 pF VDS = 0V, VGS = ±10V VDS = VGS ID = 250µA 0.5 ID(ON) On state drain current VGS = 4.5V, VDS = 5V 60 VGS = 4.5V, ID = 6.0A TJ=125°C gFS Forward Transconductance VSD IS = 1A,VGS = 0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS = 5V, ID = 6.0A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time µA 0.75 Gate-Body leakage current Gate Threshold Voltage IS Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS = 20V, VGS = 0V IGSS RDS(ON) Typ A 34 0.65 620 VGS=0V, VDS=10V, f=1MHz VGS= 10V, VDS= 10V, ID= 6A mΩ S 125 pF 64 pF 16.2 21 nC 7.7 10 nC 1.5 nC Gate Drain Charge 2.7 nC Turn-On DelayTime 236 ns 448 9.5 ns µs 4.1 µs VGS=10V, VDS=10V, RL=1.7Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs 9 33 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA Rev0 April 2008 2/4 www.freescale.net.cn AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 60 4.5V VDS= 5V 3V 50 30 2.5V 30 ID(A) ID (A) 40 2V 20 20 10 VGS=1.5V 10 125°C 0 0 0 1 2 3 4 5 0.5 1 26 2 2.5 3 1.6 25 Normalized On-Resistance VGS= 2.5V 24 RDS(ON) (mΩ) 1.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 23 VGS= 3.1V 22 VGS= 4.0V 21 20 VGS= 4.5V 19 0 4 8 VGS= 4.5V ID= 6A 1.4 1.2 1.0 0.8 IF=-6.5A,16 dI/dt=100A/µs 12 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 55 ID= 6.0A 1E+01 1E+00 45 125°C 1E-01 IS (A) RDS(ON) (mΩ) 25°C 35 1E-02 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER 1E-03 MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES125°C OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 OUT OF25SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 15 1 2 3 4 5 6 7 8 1E-05 1E-06 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/4 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn 1.2 AO6808 Dual N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS= 10V ID= 6A 800 Ciss Capacitance (pF) VGS (Volts) 8 6 4 600 400 2 200 0 0 Coss Crss 0 3 6 9 12 15 18 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000 100 RDS(ON) limited 10µs 100µs 1 1ms 10ms 100ms 0.1 TJ(Max)=150°C TA=25°C DC 0.01 0.1 1 0.1 0.00001 IF=-6.5A, dI/dt=100A/µs 10 ZθJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W 10 1 10s 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 TJ(Max)=150°C TA=25°C 100 Power (W) 10 ID (Amps) 5 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE. T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 4/4 www.freescale.net.cn