SHENZHENFREESCALE AOD4184

AOD4184/AOI4184
40V N-Channel MOSFET
General Description
The AOD4184/AOI4184 used advanced trench technology and design to provide excellent RDS(ON) with low gate
charge. With the excellent thermal resistance of the DPAK package, those devices are well suited for high current
load applications.
Features
VDS
ID (at VGS=10V)
40V
50A
RDS(ON) (at VGS=10V)
< 8mΩ
RDS(ON) (at VGS = 4.5V)
< 11mΩ
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current
C
6.5
A
5
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
EAS, EAR
61
mJ
TC=25°C
Power Dissipation
B
TC=100°C
Junction and Storage Temperature Range
2.3
Steady-State
Steady-State
RθJA
RθJC
W
1.5
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Case
50
PD
TA=25°C
Power Dissipation A
1/6
A
120
IDSM
TA=70°C
V
40
IDM
TA=25°C
Continuous Drain
Current
Units
V
50
ID
TC=100°C
Pulsed Drain Current
Maximum
40
±20
-55 to 175
Typ
18
44
2.4
°C
Max
22
55
3
Units
°C/W
°C/W
°C/W
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AOD4184/AOI4184
40V N-Channel MOSFET
Electrical Characteristics (T J=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
VDS=40V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
ID(ON)
Gate Threshold Voltage
On state drain current
VDS=VGS ID=250µA
1.7
VGS=10V, VDS=5V
120
TJ=55°C
5
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=15A
gFS
Forward Transconductance
VSD
IS=1A,VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=20A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=20A
Units
V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
40
IDSS
RDS(ON)
Typ
µA
100
nA
2.2
2.6
V
6.7
8
11
13
8.5
11
A
37
0.72
mΩ
mΩ
S
1
V
20
A
120
1500
1800
pF
150
215
280
pF
80
135
190
pF
2
3.5
5
Ω
21
27.2
33
nC
10
13.6
16
nC
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
4.5
nC
6.4
nC
6.4
ns
17.2
ns
29.6
ns
16.8
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
20
29
38
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
18
26
34
ns
nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
2/6
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AOD4184/AOI4184
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100
10V
5V
VDS=5V
100
80
4V
60
ID(A)
ID (A)
80
60
3.5V
40
125°C
40
25°C
20
20
VGS=3V
0
0
0
1
2
3
4
2
5
10
RDS(ON) (mΩ)
Normalized On-Resistance
VGS=4.5V
8
7
VGS=10V
6
3.5
4
4.5
2
VGS=10V
ID=20A
1.8
1.6
17
5
2
VGS=4.5V10
1.4
1.2
1
ID=15A
0.8
0.6
5
0
5
-50
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
-25
0
25
50
75
100 125 150 175
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
1.0E+02
25
ID=20A
1.0E+01
40
20
125°C
1.0E+00
IS (A)
RDS(ON) (mΩ)
3
2.2
9
15
125°C
10
1.0E-01
25°C
1.0E-02
1.0E-03
1.0E-04
25°C
5
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/6
2.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
1.2
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AOD4184/AOI4184
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
2500
VDS=20V
ID=20A
2000
Capacitance (pF)
VGS (Volts)
8
6
4
2
1000
Coss
Crss
0
0
5
10
15
20
25
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
1000
1000.0
10µs
100.0
10.0
100µs
1ms
10ms
DC
1.0
0.1
800
TJ(Max)=175°C
TC=25°C
0.0
0.01
0.1
1
17
5
2
10
600
400
200
1
VDS (Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
Power (W)
ID (Amps)
1500
500
0
ZθJC Normalized Transient
Thermal Resistance
Ciss
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJ
0
1E-05 0.0001 0.001
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=3°C/W
0.1
PD
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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AOD4184/AOI4184
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
60
TA=25°C
TA=100°C
TA=125°C
TA=150°C
50
40
30
20
10
0
10
0.000001
0
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
150
175
1000
60
TA=25°C
50
40
Power (W)
Current rating ID(A)
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
30
20
100
17
5
2
10
10
10
1
0.001
0
0
25
50
75
100
125
150
175
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.1
10
0
1000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=55°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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AOD4184/AOI4184
40V N-Channel MOSFET
Gate Charge Test Circuit & W aveform
Vgs
Qg
10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
Rg
-
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
6/6
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt
I RM
Vdd
Vds
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