AOD468/AOI468 300V,11.5A N-Channel MOSFET Description GeneralGeneral Description The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R DS(on), C iss and C rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Product Summary VDS ID (at VGS=10V) 350V@150℃ RDS(ON) (at VGS=10V) <0.42Ω 11.5A 100% UIS Tested! 100% Rg Tested! D G S Absolute Maximum Ratings TA =25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain B Current TC=100°C Pulsed Drain Current C Maximum 300 Units V ±30 V 11.5 ID 8.3 A IDM 29 IAR 3.8 A EAR 216 mJ Single pulsed avalanche energy Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25 oC EAS dv/dt 430 5 150 mJ V/ns W Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG 1 -50 to 175 W/ oC °C 300 °C Avalanche Current C Repetitive avalanche energy C H Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Case-to-sink Maximum Junction-to-Case D,F 1/6 A,G PD TL Symbol RθJA RθCS RθJC Typical 45 Maximum 55 Units °C/W 0.7 0.5 1 °C/W °C/W www.freescale.net.cn AOD468/AOI468 300V,11.5A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 300 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS=5V ID=250µA gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current ISM ID=250µA, VGS=0V, TJ=150°C 350 V ID=250µA, VGS=0V 0.29 V/ C VDS=300V, VGS=0V 1 VDS=240V, TJ=125°C 10 Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge ±100 µA 4 4.5 nΑ V VGS=10V, ID=6A 0.31 0.42 Ω VDS=40V, ID=6A 11 1 V 12 A 29 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss o VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 3.4 0.74 S 500 632 790 pF 55 90 125 pF 3 7 11 pF 1.3 2.7 4.1 Ω 10 12.8 16 nC VGS=10V, VDS=240V, ID=12A 4.4 nC Qgd Gate Drain Charge 4.3 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time 31 ns tD(off) Turn-Off DelayTime 36 ns tf Turn-Off Fall Time VGS=10V, VDS=150V, ID=12A, RG=25Ω 20 IF=12A,dI/dt=100A/µs,VDS=100V trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V ns 130 170 205 1 1.3 1.6 ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting T J=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AOD468/AOI468 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 100 VDS=40V 10V -55°C 15 10 ID(A) ID (A) 6.5V 10 6V 125°C 1 5 VGS=5.5V 25°C 0.1 0 0 5 10 15 20 25 2 30 4 1.5 3 1.2 2.5 Normalized On-Resistance RDS(ON) (Ω) VDS (Volts) Fig 1: On-Region Characteristics VGS=10V 0.9 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics 0.6 0.3 VGS=10V ID=6A 2 1.5 1 0.5 0.0 0 5 10 15 20 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.2 1.0E+02 ID=30A 40 1.0E+00 1 IS (A) BVDSS (Normalized) 1.0E+01 1.1 125°C 125°C 25°C 1.0E-01 1.0E-02 0.9 25°C 0.8 -100 1.0E-03 1.0E-04 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev0: Dec 2010 -50 0 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD468/AOI468 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 Capacitance (pF) VGS (Volts) Ciss VDS=240V ID=12A 12 9 6 1000 Coss 100 Crss 10 3 0 1 0 4 8 12 16 20 0.1 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 800 10µs RDS(ON) limited 1ms 1 10ms DC 0.1 1 10 100 1000 VDS (Volts) ZθJC Normalized Transient Thermal Resistance 1 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 400 200 TJ(Max)=175°C TC=25°C 0.01 TJ(Max)=175°C TC=25°C 600 100µs Power (W) ID (Amps) 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD468/AOI468 300V,11.5A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 150 Current rating ID(A) Power Dissipation (W) 180 120 90 60 9 6 3 30 0 0 0 25 50 75 100 125 150 175 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Current De-rating (Note B) 400 TA=25°C Power (W) 300 200 100 0 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 1000 ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 0.01 PD 0.001 Ton Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD468/AOI468 300V,11.5A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - VDC DUT Qgs Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs Ig 6/6 Vgs Isd L + Vdd VDC - IF trr dI/dt IRM Vds Vdd www.freescale.net.cn