SHENZHENFREESCALE AON6404

AON6404
30V N-Channel MOSFET
General Description
The AON6404 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 2.2mΩ (VGS = 10V)
RDS(ON) < 3.8mΩ (VGS = 4.5V)
D
Top View
1
8
2
7
3
6
4
5
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current B,G
Units
V
±20
V
85
TC=100°C
Pulsed Drain Current
ID
67
IDM
160
TA=25°C
Continuous Drain
Current A
Maximum
30
TA=70°C
IDSM
20
Avalanche Current
IAS
85
Single avalanche energy L=0.1mH
TC=25°C
EAS
361
Power Dissipation
B
Power Dissipation
A
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Case
1/6
C
2.1
W
1.3
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
33
PDSM
TA=70°C
mJ
83
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
A
Maximum Junction-to-Ambient
A
25
RθJA
RθJC
Typ
15
45
1.1
°C
Max
20
60
1.5
Units
°C/W
°C/W
°C/W
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AON6404
30V N-Channel MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
ID=250µA, VGS=0V
Min
Typ
30
34
VDS=30V, VGS=0V
TJ=55°C
5
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
160
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
10
uA
2
V
1.8
2.2
2.5
3
3.1
A
Forward Transconductance
VDS=5V, ID=20A
75
VSD
Diode Forward Voltage
IS=85A,VGS=0V
0.87
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
7420
VGS=0V, VDS=15V, f=1MHz
uA
1.7
gFS
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
V
1
VGS(th)
RDS(ON)
Max
mΩ
3.8
mΩ
1.3
V
85
A
S
9000
pF
1045
pF
720
pF
1.2
1.8
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
118
155
nC
Qg(4.5V) Total Gate Charge
54
nC
29
nC
22
nC
17
ns
18
ns
67
ns
25
ns
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=20A, dI/dt=100A/µs
60
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
66
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
80
ns
nC
A: The value of RθJA is measured with the device in a still air environment with T A =25°C, with the device mounted on 1 in2 FR-4 board with
2oz. Copper, in a still air environment with T A=25°
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where Badditional heatsink is used.
Continuous
Drain Current
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
25 mounted to a large heatsink,
F. These curves are based on the junction-to-case thermal impedence which is measured with the device
ratin g.
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse 20
G. Maximum current is limited by the package.
Rev4: May 2011
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
2/6
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AON6404
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
160
100
VGS=10V,6V,4.5V,4V
140
VDS=5V
80
120
60
3.5V
ID(A)
ID (A)
100
80
125°C
40
60
40
25°C
20
3V
20
2V
0
0
0
1
2
3
4
5
1.5
2
VDS (Volts)
Fig 1: On-Region Characteristics
3
3.5
4
VGS(Volts)
Figure 2: Transfer Characteristics
3.5
1.6
3
2.5
VGS=10V
2
ID=20A
Normalized On-Resistance
VGS=4.5V
RDS(ON) (mΩ )
2.5
VGS=10V
1.4
1.2
VGS=4.5V
1
0.8
1.5
0.6
0
5
10
15
20
25
30
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100
125
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
6
1.E+02
ID=20A
1.E+01
5
125°C
1.E-01
IS (A)
RDS(ON) (mΩ )
1.E+00
4
25°C
1.E-02
125°C
3
1.E-03
2
1.E-04
25°C
1
1.E-05
2
5
8
11
14
17
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON6404
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12000
10
VDS=15V
ID=20A
10000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
8000
6000
4000
Coss
2000
0
Crss
0
0
20
40
60
80
100
120
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100000
RDS(ON)
limited
TJ(Max)=150°C
TC=25°C
10000
10us
100
100us
DC
Power (W)
ID (Amps)
30
1000
1ms
10
100
10ms
TJ(Max)=150°C
TC=25°C
1
0.1
1
10
10
1.00E-06
100
VDS (Volts)
1.00E-04
1.00E-02
1.00E+00
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJc.RθJc
RθJC=1.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD
0.1
Ton
0.01
0.00001
T
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AON6404
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
TA=25°C
80
130
Power Dissipation (W)
ID(A), Peak Avalanche Current
150
110
90
70
70
60
50
40
30
20
10
0
50
1.000E-06
1.000E-05
1.000E-04
0
1.000E-03
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
10000
90
1000
70
Power (W)
Current rating ID(A)
80
60
50
40
100
30
10
20
10
1
1.00E-03
0
0
25
50
75
100
125
1.00E-01
1.00E+01
1.00E+03
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note A)
150
TCASE (°C)
Figure 14: Current De-rating (Note B,G)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
Single Pulse
0.001
0.001
0.01
0.1
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note A)
5/6
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AON6404
30V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
6/6
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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