AON6404 30V N-Channel MOSFET General Description The AON6404 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 2.2mΩ (VGS = 10V) RDS(ON) < 3.8mΩ (VGS = 4.5V) D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current B,G Units V ±20 V 85 TC=100°C Pulsed Drain Current ID 67 IDM 160 TA=25°C Continuous Drain Current A Maximum 30 TA=70°C IDSM 20 Avalanche Current IAS 85 Single avalanche energy L=0.1mH TC=25°C EAS 361 Power Dissipation B Power Dissipation A TA=25°C Junction and Storage Temperature Range Maximum Junction-to-Case 1/6 C 2.1 W 1.3 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 33 PDSM TA=70°C mJ 83 PD TC=100°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient A 25 RθJA RθJC Typ 15 45 1.1 °C Max 20 60 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AON6404 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V Min Typ 30 34 VDS=30V, VGS=0V TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±16V Gate Threshold Voltage VDS=VGS ID=250µA 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 160 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A 10 uA 2 V 1.8 2.2 2.5 3 3.1 A Forward Transconductance VDS=5V, ID=20A 75 VSD Diode Forward Voltage IS=85A,VGS=0V 0.87 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 7420 VGS=0V, VDS=15V, f=1MHz uA 1.7 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 VGS(th) RDS(ON) Max mΩ 3.8 mΩ 1.3 V 85 A S 9000 pF 1045 pF 720 pF 1.2 1.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 118 155 nC Qg(4.5V) Total Gate Charge 54 nC 29 nC 22 nC 17 ns 18 ns 67 ns 25 ns Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=100A/µs 60 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 66 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 80 ns nC A: The value of RθJA is measured with the device in a still air environment with T A =25°C, with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where Badditional heatsink is used. Continuous Drain Current C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 25 mounted to a large heatsink, F. These curves are based on the junction-to-case thermal impedence which is measured with the device ratin g. assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse 20 G. Maximum current is limited by the package. Rev4: May 2011 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON6404 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 100 VGS=10V,6V,4.5V,4V 140 VDS=5V 80 120 60 3.5V ID(A) ID (A) 100 80 125°C 40 60 40 25°C 20 3V 20 2V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 3.5 1.6 3 2.5 VGS=10V 2 ID=20A Normalized On-Resistance VGS=4.5V RDS(ON) (mΩ ) 2.5 VGS=10V 1.4 1.2 VGS=4.5V 1 0.8 1.5 0.6 0 5 10 15 20 25 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 6 1.E+02 ID=20A 1.E+01 5 125°C 1.E-01 IS (A) RDS(ON) (mΩ ) 1.E+00 4 25°C 1.E-02 125°C 3 1.E-03 2 1.E-04 25°C 1 1.E-05 2 5 8 11 14 17 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AON6404 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12000 10 VDS=15V ID=20A 10000 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 8000 6000 4000 Coss 2000 0 Crss 0 0 20 40 60 80 100 120 0 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 100000 RDS(ON) limited TJ(Max)=150°C TC=25°C 10000 10us 100 100us DC Power (W) ID (Amps) 30 1000 1ms 10 100 10ms TJ(Max)=150°C TC=25°C 1 0.1 1 10 10 1.00E-06 100 VDS (Volts) 1.00E-04 1.00E-02 1.00E+00 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON6404 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 90 TA=25°C 80 130 Power Dissipation (W) ID(A), Peak Avalanche Current 150 110 90 70 70 60 50 40 30 20 10 0 50 1.000E-06 1.000E-05 1.000E-04 0 1.000E-03 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 100 10000 90 1000 70 Power (W) Current rating ID(A) 80 60 50 40 100 30 10 20 10 1 1.00E-03 0 0 25 50 75 100 125 1.00E-01 1.00E+01 1.00E+03 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note A) 150 TCASE (°C) Figure 14: Current De-rating (Note B,G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse 0.001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note A) 5/6 www.freescale.net.cn AON6404 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn