SHENZHENFREESCALE AON4805L

AON4805L
Dual P-Channel Enhancement Mode
Field Effect Transistor
General Description
The AON4805L uses advanced trench technology to provide excellent R DS(ON) , low gate charge and
operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM
applications.
-RoHS Compliant
-Halogen Free
Features
VDS (V) = -20V
(VGS = -4.5V)
ID = -4.5A
RDS(ON) < 65mΩ (VGS = -4.5V)
RDS(ON) < 85mΩ (VGS = -2.5V)
RDS(ON) < 115mΩ (VGS = -1.8V)
DFN 3x2
Top View
Pin 1
S1
G1
S2
G2
1
2
3
4
8
7
6
5
D1
D1
D2
D2
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
TA=70°C
Junction and Storage Temperature Range
1/5
AD
±8
V
t ≤ 10s
Steady-State
Steady-State
A
2
W
1.3
TJ, TSTG
Symbol
A
Units
V
-25
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
MOSFET
-20
-3.5
ID
IDM
TA=25°C
Power Dissipation
S2
-4.5
Pulsed Drain Current C
B
D2
D1
Bottom View
RθJA
RθJL
-55 to 150
Typ
50
84
28
°C
Max
60
100
34
Units
°C/W
°C/W
°C/W
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AON4805L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-25
TJ=55°C
-1
V
53
65
72
90
VGS=-2.5V, ID=-3A
66
85
mΩ
VGS=-1.8V, ID=-2A
88
115
mΩ
VDS=-5V, ID=-4.5A
15
TJ=125°C
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
µA
-0.67
Forward Transconductance
Coss
-5
nA
gFS
IS
Units
±100
VGS=-4.5V, ID=-4.5A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
A
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-4.5A
mΩ
S
-1
V
-1.7
A
670
pF
80
pF
70
pF
15
23
Ω
8.5
10
nC
1.2
nC
Qgd
Gate Drain Charge
2.1
nC
tD(on)
Turn-On DelayTime
7.2
ns
tr
Turn-On Rise Time
36
ns
tD(off)
Turn-Off DelayTime
53
ns
tf
Turn-Off Fall Time
56
ns
trr
Body Diode Reverse Recovery Time
IF=-4.5A, dI/dt=100A/µs
37
Qrr
Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=100A/µs
27
VGS=-4.5V, VDS=-10V, RL=2.2Ω,
RGEN=6Ω
45
ns
nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C.
D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.12
2
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev0 : July 2008
2/5
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AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
VDS=-5V
-3.0V
-4.5V
-2.5V
20
15
-ID(A)
-ID (A)
15
-2.0V
10
10
5
VGS=-1.5V
5
125°C
25°C
0
0
0
1
2
3
4
5
0
0.5
-VDS (Volts)
Figure 1: On-Region Characteristics(Note E)
1
1.5
2
2.5
3
-VGS(Volts)
Figure 2: Transfer Characteristics(Note E)
1.6
VGS=-4.5V
ID=-4.5A
RDS(ON) (mΩ)
120
Normalized On-Resistance
140
VGS=-1.8V
100
VGS=-2.5V
80
VGS=-4.5V
60
40
1.4
VGS=-2.5V
ID=-3A
1.2
VGS=-1.8V
ID=-2A
1
0.8
0
2
4
6
8
10
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
180
1E+02
ID=-4.5A
160
1E+01
12
140
1E+00
120
-IS (A)
RDS(ON) (mΩ)
50
100
125°C
125°C
1E-01
25°C
1E-02
80
1E-03
60
1E-04
25°C
40
0
2
4
6
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
3/5
8
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics(Note E)
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AON4805L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1200
1000
Capacitance (pF)
4
-VGS (Volts)
1400
VDS=-10V
ID=-4.5A
3
2
800
Ciss
600
400
1
Coss
200
0
Crss
0
0
2
4
6
8
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
RDS(ON)
limited
100µ
0.10
DC
TJ(Max)=150°C
TA=25°C
1ms
10ms
0.1s
1s
1
10
100
0.1
0.00001
1
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=110°C/W
TJ(Max)=150°C
TA=25°C
10
-VDS (Volts)
10
20
1
0.01
0.1
15
100
Power (W)
-ID (Amps)
1000
1.00
ZθJA Normalized Transient
Thermal Resistance
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00
5
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AON4805L
Gate Charge Test Circuit & Waveform
Vgs
Qg
-
+
VDC
Qgs
Vds
Qgd
+
DUT
-
VDC
-10V
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t off
t on
Vgs
VDC
-
DUT
Vgs
Rg
td(on)
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
5/5
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt
-I RM
Vdd
-Vds
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