AON4805L Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AON4805L uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltage as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS Compliant -Halogen Free Features VDS (V) = -20V (VGS = -4.5V) ID = -4.5A RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 85mΩ (VGS = -2.5V) RDS(ON) < 115mΩ (VGS = -1.8V) DFN 3x2 Top View Pin 1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G2 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current TA=70°C Junction and Storage Temperature Range 1/5 AD ±8 V t ≤ 10s Steady-State Steady-State A 2 W 1.3 TJ, TSTG Symbol A Units V -25 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead MOSFET -20 -3.5 ID IDM TA=25°C Power Dissipation S2 -4.5 Pulsed Drain Current C B D2 D1 Bottom View RθJA RθJL -55 to 150 Typ 50 84 28 °C Max 60 100 34 Units °C/W °C/W °C/W www.freescale.net.cn AON4805L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 TJ=55°C -1 V 53 65 72 90 VGS=-2.5V, ID=-3A 66 85 mΩ VGS=-1.8V, ID=-2A 88 115 mΩ VDS=-5V, ID=-4.5A 15 TJ=125°C VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge µA -0.67 Forward Transconductance Coss -5 nA gFS IS Units ±100 VGS=-4.5V, ID=-4.5A Static Drain-Source On-Resistance Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ A -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-4.5A mΩ S -1 V -1.7 A 670 pF 80 pF 70 pF 15 23 Ω 8.5 10 nC 1.2 nC Qgd Gate Drain Charge 2.1 nC tD(on) Turn-On DelayTime 7.2 ns tr Turn-On Rise Time 36 ns tD(off) Turn-Off DelayTime 53 ns tf Turn-Off Fall Time 56 ns trr Body Diode Reverse Recovery Time IF=-4.5A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=100A/µs 27 VGS=-4.5V, VDS=-10V, RL=2.2Ω, RGEN=6Ω 45 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on T J(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C: Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.12 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev0 : July 2008 2/5 www.freescale.net.cn AON4805L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 VDS=-5V -3.0V -4.5V -2.5V 20 15 -ID(A) -ID (A) 15 -2.0V 10 10 5 VGS=-1.5V 5 125°C 25°C 0 0 0 1 2 3 4 5 0 0.5 -VDS (Volts) Figure 1: On-Region Characteristics(Note E) 1 1.5 2 2.5 3 -VGS(Volts) Figure 2: Transfer Characteristics(Note E) 1.6 VGS=-4.5V ID=-4.5A RDS(ON) (mΩ) 120 Normalized On-Resistance 140 VGS=-1.8V 100 VGS=-2.5V 80 VGS=-4.5V 60 40 1.4 VGS=-2.5V ID=-3A 1.2 VGS=-1.8V ID=-2A 1 0.8 0 2 4 6 8 10 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note E) 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature(Note E) 180 1E+02 ID=-4.5A 160 1E+01 12 140 1E+00 120 -IS (A) RDS(ON) (mΩ) 50 100 125°C 125°C 1E-01 25°C 1E-02 80 1E-03 60 1E-04 25°C 40 0 2 4 6 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage(Note E) 3/5 8 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) www.freescale.net.cn AON4805L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 1000 Capacitance (pF) 4 -VGS (Volts) 1400 VDS=-10V ID=-4.5A 3 2 800 Ciss 600 400 1 Coss 200 0 Crss 0 0 2 4 6 8 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10µs RDS(ON) limited 100µ 0.10 DC TJ(Max)=150°C TA=25°C 1ms 10ms 0.1s 1s 1 10 100 0.1 0.00001 1 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W TJ(Max)=150°C TA=25°C 10 -VDS (Volts) 10 20 1 0.01 0.1 15 100 Power (W) -ID (Amps) 1000 1.00 ZθJA Normalized Transient Thermal Resistance 10 -VDS (Volts) Figure 8: Capacitance Characteristics 100.00 10.00 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 12 0.1 PD 0.01 Ton Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/5 www.freescale.net.cn AON4805L Gate Charge Test Circuit & Waveform Vgs Qg - + VDC Qgs Vds Qgd + DUT - VDC -10V Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds t off t on Vgs VDC - DUT Vgs Rg td(on) t d(off) tr tf 90% Vdd + Vgs 10% Vds Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig 5/5 Vgs L -Isd + Vdd VDC - -I F t rr dI/dt -I RM Vdd -Vds www.freescale.net.cn