AO4498 30V N-Channel MOSFET General Description The AO4498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 4.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=70°C C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead 1/6 ±20 V A 14 IDM 140 IAR 42 A 88 mJ EAR 3.1 PD Junction and Storage Temperature Range Units V 18 ID TC=70°C Maximum 30 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 2 RθJA RθJL Typ 31 59 16 °C Max 40 75 24 Units °C/W °C/W °C/W www.freescale.net.cn AO4498 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Min Typ 30 36.5 VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.3 VGS=10V, VDS=5V 140 TJ=55°C 5 VGS=10V, ID=18A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=16A 100 nA 2.5 V 4.6 5.5 6.6 8 6 7.5 mΩ 1 V 4 A 2300 pF A Forward Transconductance VDS=5V, ID=18A 53 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 316 pF 227 pF Ω 1.4 2.1 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 37 44.5 Qg(4.5V) Total Gate Charge 18 nC 4.8 nC 11 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, ID=18A 0.7 mΩ S 1910 VGS=0V, VDS=15V, f=1MHz µA 1.8 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 IDSS ID(ON) Max nC 8.1 ns VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω 8.6 ns 29 ns 8 ns IF=18A, dI/dt=500A/µs 14 Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs 40 17 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev 1 : Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AO4498 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 120 VDS=5V 70 5V 60 100 6V 50 4V 80 ID(A) ID (A) 80 4.5V 10V 60 40 30 40 20 VGS=3.5V 20 10 0 0 0 1 2 3 4 125° C 0 5 1 10 4 5 Normalized On-Resistance 1.8 8 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 6 4 VGS=10V 2 VGS=10V ID=18A 1.6 1.4 17 5 VGS=4.5V 2 ID=16A 10 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E) 14 1.0E+02 ID=18A 12 1.0E+01 40 1.0E+00 8 IS (A) 10 RDS(ON) (mΩ ) 2 25°C 125°C 125°C 1.0E-01 1.0E-02 6 25°C 1.0E-03 4 25°C 2 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AO4498 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=15V ID=18A 2500 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2000 1500 1000 2 500 0 Crss 0 0 10 20 30 Qg (nC) Figure 7: Gate-Charge Characteristics 40 120 0 1000.0 100 TA=25°C 80 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10µs TA=100° 100µs 10.0 60 TA=150° 40 1ms 10ms 100ms 10s 1.0 0.1 20 30 RDS(ON) limited 100.0 ID (Amps) ID(A), Peak Avalanche Current Coss DC TJ(Max)=150°C TA=25°C TA=125° 0.0 0 0.000001 0.1 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 TJ(Max)=150°C TA=25°C Power (W) 100 10 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F) 4/6 www.freescale.net.cn AO4498 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=40°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Q 5/6 www.freescale.net.cn AO4498 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg Vgs 10% Vgs td(on) tr td(off) ton tf toff Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn