SHENZHENFREESCALE AON4803

AON4803
20V Dual P-Channel MOSFET
General Description
The AON4803 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R DS(ON) . This device is ideal for load switch and battery protection applications.
Product Summary
VDS
-20V
-3.4A
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
< 90mΩ
RDS(ON) (at VGS =-2.5V)
< 120mΩ
RDS(ON) (at VGS =-1.8V)
< 165mΩ
D2
D1
Top View
S1
1
8
D1
G1
2
7
D1
S2
G2
3
6
4
5
D2
D2
G2
G1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
1/5
Steady-State
Steady-State
V
A
1.7
W
1.1
TJ, TSTG
Symbol
t ≤ 10s
±8
-15
PD
TA=70°C
Units
V
-2.7
IDM
TA=25°C
Maximum
-20
-3.4
ID
TA=70°C
S2
RθJA
RθJL
-55 to 150
Typ
51
88
28
°C
Max
75
110
35
Units
°C/W
°C/W
°C/W
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AON4803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-15
TJ=55°C
nA
V
65
90
90
125
VGS=-2.5V, ID=-2.5A
80
120
mΩ
VGS=-1.8V, ID=-1.5A
100
165
mΩ
12
TJ=125°C
VDS=-5V, ID=-3.4A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
A
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.4A
S
V
-2
A
745
pF
80
pF
pF
15
23
Ω
6.1
8
nC
0.6
nC
1.6
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-3.4A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs
7.5
VGS=-4.5V, VDS=-10V, RL=2.9Ω,
RGEN=3Ω
mΩ
-1
70
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
µA
-1
Forward Transconductance
Crss
-5
±100
gFS
Coss
Units
-0.65
VGS=-4.5V, ID=-3.4A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
10
ns
12
ns
44
ns
22
ns
21
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
2/5
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AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
-4.5V
VDS=-5V
-3.0V
20
15
-2.5V
-ID(A)
-ID (A)
15
10
10
125°C
-2.0V
25°C
5
5
VGS=-1.5V
0
0
0
1
2
3
4
0
5
90
Normalized On-Resistance
RDS(ON) (mΩ
Ω)
2
3
4
1.4
80
70
VGS=-2.5V
60
50
VGS=-4.5V
40
VGS=-1.8V
ID=-1.5A
1.2
VGS=-2.5V
ID=-2.5A
1
VGS=-4.5V
ID=-3.4A
17
5
2
10
100
150
0.8
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
125
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
180
1.0E+02
ID=-3.4A
1.0E+01
40
140
1.0E+00
100
125°C
-IS (A)
RDS(ON) (mΩ
Ω)
1
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
60
25°C
1.0E-04
1.0E-05
20
0
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
3/5
2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON4803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-3.4A
1200
1000
Capacitance (pF)
-VGS (Volts)
4
3
2
800
Ciss
600
400
Coss
1
200
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
10µs
RDS(ON)
limited
1000
Power (W)
-ID (Amps)
10.0
100µs
1.0
1ms
10ms
100
10
0.1
10s
DC
TJ(Max)=150°C
TA=25°C
1
0.0
0.00001
0.01
0.1
1
-VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=110°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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AON4803
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
5/5
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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