AON5820 20V Common-Drain Dual N-Channel MOSFET General Description The AON5820 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating It is ESD protected. This device is suitabl e for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Product Summary VDS ID (at VGS=4.5V) 20V 10A RDS(ON) (at VGS=4.5V) < 9.5mΩ RDS(ON) (at VGS=4.0V) < 10mΩ RDS(ON) (at VGS=3.5V) < 10.5mΩ RDS(ON) (at VGS=3.1V) < 11.5mΩ RDS(ON) (at VGS=2.5V) < 13mΩ Typical ESD protection HBM Class 2 D2 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 Steady-State Steady-State V A 1.7 RθJA RθJC W 1 TJ, TSTG Symbol t ≤ 10s ±12 85 PDSM TA=70°C Units V 8 IDM TA=25°C A Maximum 20 10 ID TA=70°C C S2 -55 to 150 Typ 30 61 4.5 °C Max 40 75 5.5 Units °C/W °C/W °C/W www.freescale.net.cn AON5820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 10 µA 1.0 V 5.5 7.4 9.5 8 11 14 VGS=4.0V, ID=10A 5.8 7.6 10 mΩ VGS=3.5V, ID=9A 6 8 10.5 mΩ VGS=3.1V, ID=9A 6.3 8.3 11.5 mΩ VGS=2.5V, ID=8A 6.8 9.2 13 mΩ 1 V 2.5 A VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS, ID=250µA ID(ON) On state drain current VGS=4.5V, VDS=5V 85 VGS=4.5V, ID=10A 0.3 TJ=125°C gFS Forward Transconductance VDS=5V, ID=10A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 0.65 Gate-Body leakage current Coss Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V VGS(th) RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz 65 0.58 mΩ S 1000 1255 1510 pF 150 220 290 pF 100 168 235 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge A 2.5 10 VGS=4.5V, VDS=10V, ID=10A 12.5 pF KΩ 15 nC Qgs Gate Source Charge 5.5 nC Qgd Gate Drain Charge 6.5 nC tD(on) Turn-On DelayTime 1.1 µs tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=4.5V, VDS=10V, RL=1Ω, RGEN=3Ω 2.6 µs 7 µs 7.4 µs trr Body Diode Reverse Recovery Time IF=10A, dI/dt=500A/µs 8.5 11 13.5 Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs 12 15 18 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AON5820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 40 4.5V 35 3V 60 30 25 2V ID(A) ID (A) VDS=5V 2.5V 40 20 15 10 20 125°C VGS=1.5V 5 25°C 0 0 0 1 2 3 4 0 5 12 1 1.5 2 VGS=2.5V VGS=3.1V 8 6 VGS=4.5V VGS=4.0V VGS=3.5V Normalized On-Resistance 1.8 10 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=3.5V ID=9A 1.6 VGS=3.1V ID=9A 1.4 17 5 VGS=2.5V ID=8A VGS=4.0V ID=10A 2 1.2 10 VGS=4.5V ID=10A 1 0.8 4 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=10A 1.0E+01 20 40 15 125°C 10 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 5 25°C 1.0E-05 0 0 3/6 1.0E-04 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON5820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2000 VDS=10V ID=10A 8 1600 Capacitance (pF) VGS (Volts) Ciss 6 4 1200 800 Coss 2 400 0 0 Crss 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 30 0 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 200 1000.0 10µs 100.0 160 100µs 1.0 1ms 10ms DC Power (W) 10.0 TJ(Max)=150°C TC=25°C 0.1 TJ(Max)=150°C TC=25°C 10µs RDS(ON) ID (Amps) 5 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18Junction-to-Case Figure 10: Single Pulse Power Rating (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=5.5°C/W 40 1 0.1 PD Ton Single Pulse T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON5820 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 25 Current rating ID(A) Power Dissipation (W) 30 20 15 10 10 5 5 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note F) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON5820 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R esis tive S w itching Te st C irc uit & W av eform s RL V ds V ds DUT V gs + VD C 90 % Vdd - Rg 1 0% V gs Vgs t d(on ) tr t d (o ff) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn