AON7820 20V Dual N-Channel MOSFET General Description The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R SS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 20V IS (at VGS=4.5V) 35A RSS(ON) (at VGS=4.5V) < 16mΩ RSS(ON) (at VGS =3.5V) < 17mΩ RSS(ON) (at VGS =2.5V) < 20mΩ D D Top View S1 D1 D1 G1 S2 G D2 G2 G D2 S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current C TA=25°C TA=70°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 Steady-State Steady-State A 31 W 12.5 3.1 RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s A 9 PDSM TA=70°C V 11 PD TA=25°C Power Dissipation A ±12 80 ISSM TC=25°C Units V 22 ISM Continuous Drain Current Maximum 20 35 IS TC=100°C S °C -55 to 150 Typ 30 60 3.2 Max 40 75 4 Units °C/W °C/W °C/W www.freescale.net.cn AON7820 20V Dual N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C 5 10 µA 1.0 V 13 16 18.7 23 VGS=3.5V, IS=10A 13.8 17 mΩ VGS=2.5V, IS=9A 15.6 20 mΩ 65 1 V 35 A VDS=0V, VGS=±10V Gate Threshold Voltage VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 80 VGS=4.5V, IS=11A TJ=125°C gFS Forward Transconductance VDS=5V, ID=11A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=10V, f=1MHz Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime A 0.58 mΩ S 1375 1720 2065 pF 215 312 410 pF 105 177 250 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs µA 0.7 Gate-Body leakage current Crss Units V 1 IGSS Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V VGS(th) RSS(ON) Typ 14 VGS=4.5V, VDS=10V, IS=11A VGS=4.5V, VDS=10V, RL=0.9Ω, RGEN=3Ω 18.2 pF ΚΩ 2.65 22 nC 9.5 nC 7.6 nC 1.65 µs 3.7 µs 5.4 µs µs tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs 11 14.5 18 Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs 17 21.5 26 10 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7820 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 40 4.5V 2.5V VDS=5V 3.5V 30 2V ID(A) IS (A) 60 40 20 125°C 10 20 VGS=1.5V 25°C 0 0 0 1 2 3 4 0 5 20 Normalized On-Resistance VGS=2.5V 16 VGS=3.5V 14 12 VGS=4.5V 1.5 2 2.5 VGS=3.5V ID=10A 1.6 VGS=2.5V ID=9A 1.4 1.2 VGS=4.5V ID=11A 1 0.8 10 0 0 5 10 15 20 Is (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 35 1.0E+02 ID=11A 1.0E+01 30 40 125°C 25 125°C 20 IS (A) 1.0E+00 RDS(ON) (mΩ Ω) 1 1.8 18 RDS(ON) (mΩ Ω) 0.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1.0E-01 25°C 1.0E-02 1.0E-03 15 25°C 1.0E-05 10 0 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 1.0E-04 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7820 20V Dual N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 5 VDS=10V ID=11A 1600 Capacitance (pF) VGS (Volts) 4 3 2 800 Coss 400 0 0 5 10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics 10.0 Power (W) 1ms 10ms DC TJ(Max)=150°C TC=25°C 0.1 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 TJ(Max)=150°C TC=25°C 160 10µs 100µs 1.0 5 200 10µs RDS(ON) limited Crss 0 25 100.0 IS (Amps) 1200 1 0 Ciss 120 80 40 0 0.0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=4°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7820 20V Dual N-Channel MOSFET 35 40 30 35 Current rating IS(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 20 15 10 5 30 25 20 15 10 5 0 0 0 25 50 75 100 125 TCASE (° °C) Figure 12: Power De-rating (Note F) 0 150 25 50 75 100 125 TCASE (° °C) Figure 13: Current De-rating (Note F) 150 10000 TA=25°C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 1000 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=75°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7820 20V Dual N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn