AOT470/AOB470L 75V N-Channel MOSFET General Description The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features VDS ID (at VGS=10V) 75V 100A RDS(ON) (at VGS=10V) < 10.5mΩ TO-263 D2PAK TO220 D D D S G G D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.3mH C TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 IAS, IAR 45 A EAS, EAR 300 mJ 268 Steady-State Steady-State W 134 2.1 RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s A 8 PDSM Junction and Storage Temperature Range A 10 PD TA=25°C V 200 IDSM TA=70°C ±25 78 IDM TA=25°C Continuous Drain Current Units V 100 ID TC=100°C Maximum 75 °C -55 to 175 Typ 10 45 0.45 Max 12 60 0.56 Units °C/W °C/W °C/W www.freescale.net.cn AOT470/AOB470L 75V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±25V Gate Threshold Voltage On state drain current VDS=VGS, ID=250µA 5 1 2 VGS=10V, VDS=5V Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=30A TO263 VDS=5V, ID=30A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Coss Output Capacitance Reverse Transfer Capacitance Rg Gate resistance 4 VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA µA V A 8.3 10.5 13.7 17 8 90 10.2 0.7 G DYNAMIC PARAMETERS Ciss Input Capacitance Crss 2.7 200 TJ=125°C Units V 1 TJ=55°C TO220 Max 75 VGS=10V, ID=30A RDS(ON) Typ VDS=75V, VGS=0V IDSS ID(ON) Min mΩ mΩ S 1 V 100 A 3760 4700 5640 pF 280 400 520 pF 110 180 250 pF 1.5 3 4.5 Ω 114 136 nC 33 40 nC 25 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge VGS=10V, VDS=30V, ID=30A Qgs Gate Source Charge Qgd Gate Drain Charge 18 tD(on) Turn-On DelayTime 21 ns tr Turn-On Rise Time 39 ns tD(off) Turn-Off DelayTime 70 ns tf trr Turn-Off Fall Time 24 ns IF=30A, dI/dt=100A/µs 37 53 70 Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs 100 143 185 Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOT470/AOB470L 75V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 100 10V VDS=5V 80 8V 150 6V 100 5.5V 60 ID(A) ID (A) 200 40 125°C 25°C 50 20 -40°C VGS=4.5V 0 0 0 2 4 6 8 10 3 4 4.5 5 5.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) Normalized On-Resistance 12 RDS(ON) (mΩ Ω) 11 VGS=10V 10 9 8 7 6 2 VGS=10V ID=30A 1.8 1.6 17 5 2 10 1.4 1.2 1 0.8 0.6 0 60 80 100 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20 40 -50 25 -25 0 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02 ID=30A 1.0E+01 20 40 1.0E+00 125°C 15 IS (A) RDS(ON) (mΩ Ω) 6 2.2 13 125°C 25°C 1.0E-01 10 1.0E-02 -40°C 5 25°C 1.0E-03 1.0E-04 0 4 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 3.5 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT470/AOB470L 75V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VDS=30V ID=30A 8 Capacitance (nF) VGS (Volts) 6 6 4 Ciss 4 2 2 Coss Crss 0 0 0 20 40 60 80 100 Qg (nC) Figure 7: Gate-Charge Characteristics 0 120 RDS(ON) limited DC 10µs 10µs 800 1ms 600 Power (W) ID (Amps) 30 40 50 60 1000 100.0 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C 17 5 2 10 400 200 0.0 0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.01 0.1 1 10 0 Pulse Width (s) 18 Junction-toFigure 10: Single Pulse Power Rating Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 10.0 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.56°C/W 1 PD 0.1 Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOT470/AOB470L 75V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C TA=125°C 250 200 150 100 50 0 10 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 10000 120 TA=25°C 100 1000 80 Power (W) Current rating ID(A) 125 TCASE (° °C) Figure 13: Power De-rating (Note F) 60 17 5 2 10 100 40 10 20 1 0 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.00001 175 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOT470/AOB470L 75V N-Channel MOSFET Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & W aveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 6/6 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn