AON7432 30V N-Channel MOSFET General Description The AON7432 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . This device is ideal for load switch and battery protection applications. Features VDS 30V ID (at VGS=10V) 18A RDS(ON) (at VGS=10V) < 15mΩ RDS(ON) (at VGS =4.5V) < 18mΩ RDS(ON) (at VGS =2.5V) < 24mΩ D Top View 1 8 2 7 3 6 4 5 G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 1/6 IAS 17 A EAS 14 mJ 20.8 Steady-State Steady-State W 8.3 3.1 RθJA RθJC W 2 TJ, TSTG Symbol t ≤ 10s A 8.5 PDSM TA=70°C A 10.5 PD TC=100°C V 14 IDSM TA=70°C ±12 60 IDM TA=25°C Continuous Drain Current Units V 18 ID TC=100°C Maximum 30 -55 to 150 Typ 30 60 5 °C Max 40 75 6 Units °C/W °C/W °C/W www.freescale.net.cn AON7432 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 0.6 ID(ON) On state drain current VGS=10V, VDS=5V 60 TJ=55°C 5 ±100 nA 1.5 V 12.5 15 20 24 VGS=4.5V, ID=8A 14 18 mΩ VGS=2.5V, ID=4A 18 24 mΩ 1 V 18 A TJ=125°C A gFS Forward Transconductance VDS=5V, ID=10.5A 50 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.07 VGS=10V, ID=10.5A Coss Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz S 813 pF 98 pF 56 VGS=0V, VDS=0V, f=1MHz 1.1 mΩ 2.3 pF 3.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 18 26 nC Qg(4.5V) Total Gate Charge 8 12 nC Qgs Gate Source Charge VGS=10V, VDS=15V, ID=10.5A 1.2 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time 3 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=1.4Ω, RGEN=3Ω 26 ns 3.5 ns IF=10.5A, dI/dt=100A/µs 14 Body Diode Reverse Recovery Charge IF=10.5A, dI/dt=100A/µs 2.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2/6 www.freescale.net.cn AON7432 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 40 10V 3V VDS=5V 40 30 2.5V 4.5V ID(A) ID (A) 30 2V 20 20 125°C 25°C 10 10 VGS=1.5V 0 0 0 1 2 3 4 0.5 5 30 1.5 2 2.5 3 Normalized On-Resistance 2 25 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=2.5V 20 VGS=4.5V 15 10 VGS=10V 1.8 VGS=10V ID=10.5A 1.6 17 1.4 VGS=4.5V 5 ID=8A 2 10 1.2 VGS=2.5V ID=4A 1 0.8 5 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 40 1.0E+02 35 1.0E+01 30 1.0E+00 40 125°C 25 1.0E-02 15 1.0E-03 25°C 125°C 1.0E-01 20 10 25°C 1.0E-04 1.0E-05 5 0 3/6 IS (A) RDS(ON) (mΩ Ω) ID=10.5A 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AON7432 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=10.5A 1000 8 Capacitance (pF) VGS (Volts) Ciss 6 4 600 400 Coss 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 30 TJ(Max)=150°C TC=25°C 10µs 100.0 160 10µs RDS(ON) 100µs 1.0 DC 1ms 10ms TJ(Max)=150°C TC=25°C 0.1 Power (W) 10.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 ID (Amps) 800 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=6°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AON7432 30V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C TA=150°C 10 TA=125°C 20 15 10 5 1 0 1 10 100 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 1000 0 25 75 100 125 TCASE (°C) Figure 13: Power De-rating (Note F) 20 10000 15 1000 50 150 Power (W) Current rating ID(A) TA=25°C 10 17 5 2 10 100 10 5 1 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 150 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AON7432 30V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn