AOD242 40V N-Channel MOSFET General Description The AOD242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Features VDS 40V 54A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 5.8mΩ RDS(ON) (at VGS=4.5V) < 8.2mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current A 14.5 A 11.5 Avalanche Current C IAS 40 A Avalanche energy L=0.1mH C TC=25°C EAS 80 mJ Power Dissipation B Junction and Storage Temperature Range 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 26.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 53.5 PD TC=100°C TA=25°C Power Dissipation A 1/6 V 165 IDSM TA=70°C ±20 42 IDM TA=25°C Units V 54 ID TC=100°C C Maximum 40 -55 to 175 Typ 15 41 2.2 °C Max 20 50 2.8 Units °C/W °C/W °C/W www.freescale.net.cn AOD242 40V N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.3 ID(ON) On state drain current VGS=10V, VDS=5V 165 TJ=55°C 5 ±100 nA 2.3 V 4.7 5.8 7.9 9.5 VGS=4.5V, ID=20A 6.4 8.2 mΩ 1 V 54 A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=20A 70 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 1.8 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 40 VDS=40V, VGS=0V IDSS RDS(ON) Typ VGS=0V, VDS=20V, f=1MHz S 1350 pF 405 pF 26 VGS=0V, VDS=0V, f=1MHz 1 mΩ pF 2 3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 19 28 nC Qg(4.5V) Total Gate Charge 8 12 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=20V, ID=20A 4.5 nC 2.3 nC 6 ns VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω 2.5 ns 23 ns 4 ns IF=20A, dI/dt=500A/µs 15.5 ns nC tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 31 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOD242 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 4.5V 80 3.5V 80 7V 60 ID(A) ID (A) 60 3V 40 125°C 40 25°C 20 20 VGS=2.5V 0 0 0 1 2 3 4 0 5 10 2 3 4 5 6 2.2 8 Normalized On-Resistance 9 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 7 6 5 4 VGS=10V 3 2 VGS=10V ID=20A 1.8 17 5 2 VGS=4.5V10 1.6 1.4 1.2 ID=20A 1 0.8 2 0 0 10 20 30 40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 40 125°C 9 IS (A) RDS(ON) (mΩ Ω) 1.0E+00 6 1.0E-01 125°C 1.0E-02 1.0E-03 3 25°C 1.0E-04 1.0E-05 0 2 3/6 25°C 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD242 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1800 VDS=20V ID=20A 1600 Ciss 1400 Capacitance (pF) VGS (Volts) 8 6 4 1200 1000 Coss 800 600 400 2 Crss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 1000.0 10µs 100.0 RDS(ON) 10µs 160 100µs 10.0 DC 1.0 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 TJ(Max)=175°C TC=25°C Power (W) ID (Amps) 5 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 0 10 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) 18Junction-to-Case Figure 10: Single Pulse Power Rating (Note F) D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Zθ JC Normalized Transient Thermal Resistance 10 1 40 RθJC=2.8°C/W PD 0.1 Ton T Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD242 40V N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C 10 TA=125°C 50 40 30 20 10 1 0 1 10 100 1000 0 25 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 50 75 100 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 10000 60 TA=25°C 50 1000 40 Power (W) Current rating ID(A) 125 30 17 5 2 10 100 20 10 10 1 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 10 0 1000 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 1E-05 175 0.001 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/6 www.freescale.net.cn AOD242 40V N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn