Transistors IC SMD Type Product specification KRF1302S 1 .2 7 -0+ 0.1.1 TO-263 Features Advanced Process Technology Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Operating Temperature 0.1max +0.1 1.27-0.1 Repetitive Avalanche Allowed up to Tjmax +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 2 .5 4 -0+ 0.2.2 5 .2 8 -0+ 0.2.2 Fast Switching 1 5 .2 5 -0+ 0.2.2 175 8 .7 -0+ 0.2.2 Dynamic dv/dt Rating 5 .6 0 Ultra Low On-Resistance +0.1 5.08-0.1 +0.2 0.4-0.2 11gate Gate 22drain Drain 33source Source Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TC = 25 Parameter ID 174 Continuous Drain Current, VGS @ 10V,TC = 100 ID 120 Pulsed Drain Current IDM 700 Power Dissipation TC = 25 PD 200 Linear Derating Factor 1.4 Gate-to-Source Voltage VGS 20 Single Pulse Avalanche Energy EAS 350 Avalanche Current*1 IAR Fig.1.2 Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt dv/dt TBD TJ,TSTG -55 to + 175 Junction-to-Case R JC 0.74 Junction-to-Ambient (PCB mount) R JA 40 Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds A W W/ V mJ A mJ V/ns 300 Fig1. Unclamped Inductive Test Circuit http://www.twtysemi.com Unit /W Fig 2. Unclamped Inductive Waveforms [email protected] 4008-318-123 1 of 2 Transistors IC SMD Type Product specification KRF1302S Electrical Characteristics Ta = 25 Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Testconditons Min VGS = 0V, ID = 250µA V(BR)DSS/ Static Drain-to-Source On-Resistance RDS(on) VGS = 10V, ID = 104A Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 VDS = 15V, ID = 104A 6.7 gfs Drain-to-Source Leakage Current IDSS Gate-to-Source Forward Leakage IGSS Gate-to-Source Reverse Leakage Max 20 Breakdown Voltage Temp. Coefficient Forward Transconductance Typ V 0.021 TJ Reference to 25 , ID = 1mA 3.3 V/ 4.0 4.0 20 VDS = 16V, VGS = 0V, TJ = 150 250 VGS = 20V 200 VGS = -20V -200 ID = 104A 79 120 Gate-to-Source Charge Qgs VDS = 16V 18 27 Gate-to-Drain ("Miller") Charge Qgd VGS = 10V 31 46 Turn-On Delay Time td(on) VDD = 11V 28 tr ID = 104A 130 td(off) RG = 4.5 47 VGS = 10V 16 Rise Time Turn-Off Delay Time m V S VDS = 20V, VGS = 0V Qg Total Gate Charge Unit Fall Time tf Intermal Drain Inductance LD 4.5 Internal Source Inductance LS 7.5 Input Capacitance Ciss VGS = 0V 3600 Output Capacitance Coss VDS = 25V 2370 Reverse Transfer Capacitance Crss f = 1.0MHz 520 Output Capacitance Coss VGS = 0V, VDS = 1.0V, f = 1.0MHz 5710 Output Capacitance Coss VGS = 0V, VDS = 16V, f = 1.0MHz 2370 VGS = 0V, VDS = 0V to 16V 3540 A nA nC ns nH Effective Output Capacitance Continuous Source Current Coss eff. Body Diode) pF IS 174 ISM 700 A Pulsed Source Current Body Diode) 1.3 V 66 100 ns 130 200 Diode Forward Voltage VSD Reverse Recovery Time trr TJ = 25 , IF = 104A Reverse RecoveryCharge Qrr di/dt = 100A/ Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) http://www.twtysemi.com TJ = 25 , IS = 104A, VGS = 0V [email protected] s 4008-318-123 C 2of 2