Transistors SMD Type Product specification 2SC4942 Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V Collector current (DC) ID(DC) 1 A Collector current (pulse) ID(pulse) *1 2 A Total power dissipation PT *2 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 PW 10 ms, duty cycle 50 % 2 *2 7.5 cm X 0.7 mm ceramic board mounted Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 600 V, IE = 0 10 ìA Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 10 ìA DC current gain hFE VCE = 5.0 V, IC = 0.1 A 30 55 VCE = 5.0 V, IC = 0.5 A 5 10 120 Collector saturation voltage VCE(sat) IC = 400 mV, IB = 80 mA 0.35 1.0 V Base saturation voltage VBE(sat) IC = 400 mV, IB = 80 mA 0.9 1.2 Gain bandwidth product fT VCE = 5.0 V, IE = ?50 mA 30 MHz pF V Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 15 Turn-on time tON IC = 0.5 A, VCC= 250 V 0.1 0.5 ìs Storage time tstg IB1 = ?IB2 = 0.1 A 4.0 5.0 ìs RL = 500Ù 0.2 0.5 ìs Fall time tf hFE Classification Marking AA1 AA2 AA3 hFE 30 to 60 40 to 80 60 to120 http://www.twtysemi.com [email protected] 4008-318-123 1of 1