TYSEMI 2SJ502

SMD Type
Product specification
2SJ502
Features
Package Dimensions
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
unit:mm
2091A
[2SJ502]
0.5
0.4
3
0.16
0.95 0.95 2
1.9
2.9
2.5
1 : Gate
2 : Source
3 : Drain
0.8
1.1
1
0.5
1.5
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
–30
V
±20
V
ID
–0.5
A
IDP
PD
PW≤10µs, duty cycle≤1%
–2.0
A
0.25
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
http://www.twtysemi.com
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Conditions
ID=–1mA, VGS=0
VDS=–30V, VGS=0
VGS=±16V, VDS=0
VDS=–10V, ID=–1mA
VDS=–10V, ID=–300mA
ID=–300mA, VGS=–10V
Ratings
min
max
–30
300
4008-318-123
Unit
V
–1.0
ID=–300mA, VGS=–4V
[email protected]
ty p
–10
µA
±10
µA
–2.5
800
V
mS
360
600
mΩ
690
970
mΩ
1 of 1