TYSEMI AP2306CGN-HF

Product specification
AP2306CGN-HF
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
D
BVDSS
20V
RDS(ON)
30mΩ
ID
▼ Surface mount package
▼ RoHS Compliant
5.5A
S
SOT-23
Description
D
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for all commercial-industrial
applications.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
20
V
+12
V
3
5.5
A
3
4.4
A
20
A
1.38
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
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3
Value
Unit
90
℃/W
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Product specification
AP2306CGN-HF
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=5
-
-
30
mΩ
VGS=2.5V, ID=2.5A
-
-
45
mΩ
0.3
-
1.2
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=5A
-
18
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS= +12V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge2
ID=5A
-
11
18
nC
Qgs
Gate-Source Charge
VDS=16V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.4
-
nC
VDS=10V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=10Ω
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
980
pF
Coss
Output Capacitance
VDS=20V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
Max. Units
trr
Reverse Recovery Time
IS=5A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
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