Product specification AP2306CGN-HF ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS(ON) 30mΩ ID ▼ Surface mount package ▼ RoHS Compliant 5.5A S SOT-23 Description D G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G S The SOT-23 package is widely used for all commercial-industrial applications. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +12 V 3 5.5 A 3 4.4 A 20 A 1.38 W Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient http://www.twtysemi.com [email protected] 3 Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2306CGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 20 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=5 - - 30 mΩ VGS=2.5V, ID=2.5A - - 45 mΩ 0.3 - 1.2 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=5A - 18 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS= +12V, VDS=0V - - +100 nA Qg Total Gate Charge2 ID=5A - 11 18 nC Qgs Gate-Source Charge VDS=16V - 1.2 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.4 - nC VDS=10V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 11 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 25 - ns tf Fall Time RD=10Ω - 4 - ns Ciss Input Capacitance VGS=0V - 610 980 pF Coss Output Capacitance VDS=20V - 90 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 80 - pF Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Test Conditions 2 Forward On Voltage 2 Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 20 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2