Transistors SMD Type Product specification BCX54,BCX55,BCX56 Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage BCX54 Symbol Rating Unit VCBO 45 V BCX55 60 V BCX56 100 V BCX54 VCEO 45 V BCX55 60 V BCX56 80 V VEBO 5 V Collector current IC 1 A Emitter-base voltage Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth(j-a) 94 K/W Thermal resistance from junction to solder point Rth(j-s) 14 K/W http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification BCX54,BCX55,BCX56 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO Emitter cutoff current IEBO DC current gain hFE DC current gain BCX54-10,BCX55-10,BCX56-10 hFE BCX54-16,BCX55-16,BCX56-16 Testconditons Min Typ VBE Transition frequency fT hFE DC current gain ratio of the complementary pairs hFE Unit VCB = 30 V, IE = 0 100 nA VCB = 30 V, IE = 0; Tj = 125 10 ìA VEB = 5 V, IC = 0 100 nA IC = 5 mA; VCE = 2 V 63 IC = 150 mA; VCE = 2 V 63 IC = 500 mA; VCE = 2 V 40 IC = 150 mA; VCE = 2 V 63 160 IC = 150 mA; VCE = 2 V 100 250 250 VCE(sat) IC = 500 mA; IB = 50 mA Collector-emitter saturation voltage Base to emitter voltage Max IC = 500 mA; VCE = 2 V IC = 10 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2V 0.5 V 1 V 130 1.3 MHz 1.6 hFE Classification TYPE BCX54 BCX54-10 BCX54-16 Marking BA BC BD TYPE BCX55 BCX55-10 BCX55-16 Marking BE BG BM TYPE BCX56 BCX56-10 BCX56-16 Marking BH BK BL http://www.twtysemi.com [email protected] 4008-318-123 2 of 2