Product specification DMP2123L P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • Mechanical Data • • Low RDS(ON): • 72 mΩ @VGS = -4.5V • 108 mΩ @VGS = -2.7V • 123 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4) Case: SOT-23 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate) • • • • SOT-23 Drain D Gate S G Source TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -3.0 -2.4 A IDM -15 A IS 2.0 A Symbol PD Value 1.4 Unit W RθJA 90 °C/W TJ, TSTG -55 to +150 °C Drain Current (Note 1) Continuous TA = 25°C TA = 70°C Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1) Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range Notes: 1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. http://www.twtysemi.com [email protected] 1 of 2 Product specification DMP2123L NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 5) TJ = 25°C Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) Maximum Body-Diode Continuous Current (Note 1) DYNAMIC PARAMETERS (Note 6) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS VGS(th) ID (ON) -20 ⎯ ⎯ -0.6 -15 ⎯ ⎯ -1 ±100 -1.25 ⎯ 72 108 123 V μA nA V A RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 51 87 99 gFS VSD IS ⎯ ⎯ ⎯ 7.3 0.79 ⎯ ⎯ -1.26 1.7 S V A Qg Qgs Qgd tD(on) tr tD(off) tf Ciss Coss Crss ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 7.3 2.0 1.9 12 20 38 41 443 128 101 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC nC nC ns ns ns ns pF pF pF mΩ Test Condition ID = -250μA, VGS = 0V VDS = -20V, VGS = 0V VDS = 0V, VGS = ±12V VDS = VGS, ID = -250μA VGS = -4.5V, VDS = -5V VGS = -4.5V, ID = -3.5A VGS = -2.7V, ID = -3.0A VGS = -2.5V, ID = -2.6A VDS = -10V, ID = -3.0A IS = -1.7A, VGS = 0V ⎯ VGS = -4.5V, VDS = -10V, ID = -3.0A VGS = -4.5V, VDS = -10V, ID = -3.0A VGS = -4.5V, VDS = -10V, ID = -3.0A VDS = -10V, VGS = -4.5V, RL = 10Ω, RG = 6Ω VDS = -16V, VGS = 0V f = 1.0MHz 4. Test pulse width t = 300μs. 5. Guaranteed by design. Not subject to production testing. http://www.twtysemi.com [email protected] 2 of 2