WINNERJOIN 2N7002T

RoHS
2N7002T
2N7002T
MOSFET
D
T
,. L
SOT-523
( N-Channel )
FEATURES
Power dissipation
1. GATE
PD: 0.15 W (Tamb=25℃)
2. SOURCE
3. DRAIN
Collector current
ID: 115 mA
Collector-base voltage
60 V
VDS:
Operating and storage junction temperature range
IC
TJ,Tstg: -55℃ to +150℃
Marking: 72
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
*
Gate-Threshold Voltage*
Gate-body Leakage*
On-state Drain Current
*
E
Forward Tran conductance
Input Capacitance
J
E
Output Capacitance
R
T
Reverse Transfer Capacitance
MIN
TYP
MAX
Vth(GS)
VDS=VGS, ID=250µA
1
lGSS
VDS=0V, VGS=±20V
±10
VDS=60V, VGS=0V
1
IDSS
RDS(0n)
*
N
conditions
specified)
60
ID(ON)
Drain-Source On-Resistance *
O
Test
otherwise
VGS=0V,ID=10µA
V(BR)DSS
C
E
L
Zero Gate Voltage Drain Current *
unless
C
O
VGS=10V, VDS=7.5V
500
1000
mA
3.2
7.5
VGS=10V, ID=500mA
4.4
13.5
CiSS
VDS=25V, VGS=0V
COSS
nA
500
VGS=5V, ID=50mA
VDS=10V, ID=200mA
V
µA
VDS=60V,VGS=0V,Tj=125℃
gFS
CrSS
2
UNIT
80
Ω
ms
22
50
11
25
2
5
f=1MHz
pF
SWITCHING
W
Turn-on Time
TD(ON)
Turn-off Time
TD(OFF)
VDD=30V,RL=150
7
20
11
20
ID=200mA,VGEN=10V
RGEN=25Ω
ns
* Pulse test.
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
2N7002T
R
T
J
E
O
IC
C
D
T
,. L
O
N
C
E
L
E
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]