RoHS 2SC3739 2SC3739 TRANSISTOR (NPN) D T ,. L SOT-23-3L 1. EMITTER 2. BASE 3. COLLECTOR PCM: W (Tamb=25℃) 1. 02 0.2 Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Test R T Emitter-base breakdown voltage V(BR)EBO Collector cut-off current 1. 60¡ À0. 05 unless otherwise specified) Symbol Collector-base breakdown voltage C 1. 9 IC TJ,Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ O 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range 2. 92¡ À0. 05 Power dissipation 0. 35 FEATURES N conditions O MIN TYP MAX UNIT Ic=100µA, IE=0 60 V Ic= 1mA, IB=0 40 V 5.0 V IE= 100µA, IC=0 VCB=40 V , IE=0 0.1 µA IEBO VEB= 4.0V , IC=0 0.1 µA hFE(1) VCE= 1.0V, IC= 150mA hFE(2) VCE=2.0V, IC=500mA Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.25 0.75 V Base-emitter voltage VBE(sat) IC=500mA, VCE=50V 1.0 1.2 V fT VCE=10V, IC= 20mA Ouput Capacitance Cob VCB=10V,IE=20mA Turn-on Time ton ICBO C E L Emitter cut-off current DC current gain DC current gain J E E Transition frequency W Storage Time tstg Turn-on Time Toff VCC=30V IC=150mA IB1=-IB2=15mA 75 20 200 150 300 75 400 3.5 MHz 8.0 pF 35 ns 225 ns 275 ns CLASSIFICATION OF hFE(1) Marking Range B12 B13 B14 75-150 100-200 150-300 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]