Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1464 SOT-23-3L TRANSISTOR (PNP) 1. EMITTER 2. BASE 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 80¡ À0. 05 0. 35 1. 9 Collector current A ICM : -0.5 Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 1. 60¡ À0. 05 2. 92¡ À0. 05 0.2 0. 95¡ À0. 025 PCM : 1. 02 Power dissipation TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1mA, IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V Collector cut-off current ICBO VCB=- 40 V , IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -4V , -0.1 µA DC current gain hFE(1) VCE=- 2V, IC= -150mA 75 140 DC current gain hFE(2) VCE=- 2V, IC= -500mA 20 50 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50mA -0.45 -0.75 V Base-emitter voltage VBE(on) IC=-500mA, VCE=-50V -1.0 -1.3 V Transition frequency fT VCE=-10V, IC= -20mA Ouput Capacitance Cob VCB=-10V, IE=-20mA Turn-on Time ton Storage Time tstg Turn-on Time Toff IC=0 VCC=-30V IC=150mA IB1=-IB2=15mA 150 300 400 5.0 MHz 8.0 pF 35 ns 225 ns 255 ns CLASSIFICATION OF hFE(1) Marking Range Y12 Y13 Y14 75-150 100-200 150-300