3DD13002

RoHS
3DD13002
3DD13002
D
T
,. L
TO-126
TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM:
1.25
W (Tamb=25℃)
1.BASE
Collector current
ICM:
1 A
Collector-base voltage
V(BR)CBO:
600 V
Operating and storage junction temperature range
2.COLLECTOR
3.EMITTER
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
IC
N
C
O
123
unless otherwise specified)
O
Test
R
T
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
600
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 1mA, IB=0
400
V
V(BR)EBO
IE= 100µA, IC=0
6
V
ICBO
VCB= 600V, IE=0
100
µA
IEBO
VEB= 6V, IC=0
100
µA
hFE(1)
VCE= 10V, IC= 250 µA
5
hFE(2)
VCE= 10 V, IC= 200 mA
9
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB=40 mA
0.8
V
Base-emitter saturation voltage
VBE(sat)
IC=200mA, IB=40 mA
1.1
V
Transition frequency
fT
VCE=10V, Ic=100mA
f =1MHz
Fall time
tf
IC=1A, IB1=-IB2=0.2A
0.5
µs
Storage time
ts
VCC=100V
2.5
µs
C
E
L
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
J
E
E
W
40
5
MHz
CLASSIFICATION OF hFE(2)
Rank
Range
9-15
15-20
WEJ ELECTRONIC CO.
20-25
Http:// www.wej.cn
25-30
30-35
35-40
E-mail:[email protected]