WINNERJOIN 2SD2137

RoHS
2SD2137
2SD2137
TRANSISTOR (NPN)
FEATURES
Power dissipation
1. BASE
2. COLLECTOR
PCM:
2
W (Tamb=25℃)
3. EMITTER
Collector current
ICM:
3
A
Collector-base voltage
V(BR)CBO:
60
V
Operating and storage junction temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
IC
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
N
O
Test
R
T
conditions
60
V
IE=1mA, IC=0
6
V
Transition frequency
fT
VCE=5V, IC=0.2A, f=10MHz
W
Switch time
ICBO
VCB=60V, IE=0
100
µA
IEBO
VEB=6V, IC=0
100
µA
hFE(1)
VCE=4V, IC=1A
70
hFE(2)
VCE=4V, IC=3A
10
VCE(sat)
IC=3A, IB=375mA
1.2
V
1.8
V
Turn-on time
ton
Storage time
tstg
Fall time
VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A
tf
320
30
MHz
0.3
µs
2.5
µs
0.2
µs
CLASSIFICATION OF hFE(1)
Rank
Range
Q
P
O
70-150
120-250
160-320
WEJ ELECTRONIC CO.
UNIT
Ic=30mA, IB=0
VCE=4V, IC=3A
E
Collector-emitter saturation voltage
MAX
V
VBE
DC current gain
TYP
60
Base-emitter voltage
Emitter cut-off current
MIN
Ic=1mA, IE=0
C
E
L
Collector cut-off current
C
unless otherwise specified)
Symbol
Collector-base breakdown voltage
O
123
TJ, Tstg: -55℃ to +150℃
J
E
D
T
,. L
TO-220
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