RoHS 2SD2137 2SD2137 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 2 W (Tamb=25℃) 3. EMITTER Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO N O Test R T conditions 60 V IE=1mA, IC=0 6 V Transition frequency fT VCE=5V, IC=0.2A, f=10MHz W Switch time ICBO VCB=60V, IE=0 100 µA IEBO VEB=6V, IC=0 100 µA hFE(1) VCE=4V, IC=1A 70 hFE(2) VCE=4V, IC=3A 10 VCE(sat) IC=3A, IB=375mA 1.2 V 1.8 V Turn-on time ton Storage time tstg Fall time VCC=50V, IC=1A, IB1=0.1A, IB2=-0.1A tf 320 30 MHz 0.3 µs 2.5 µs 0.2 µs CLASSIFICATION OF hFE(1) Rank Range Q P O 70-150 120-250 160-320 WEJ ELECTRONIC CO. UNIT Ic=30mA, IB=0 VCE=4V, IC=3A E Collector-emitter saturation voltage MAX V VBE DC current gain TYP 60 Base-emitter voltage Emitter cut-off current MIN Ic=1mA, IE=0 C E L Collector cut-off current C unless otherwise specified) Symbol Collector-base breakdown voltage O 123 TJ, Tstg: -55℃ to +150℃ J E D T ,. L TO-220 Http:// www.wej.cn E-mail:[email protected]