RoHS 2SA821 2SA821 D T ,. L TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) C 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 3. BASE TJ, Tstg: -55℃ to +150℃ R T ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol C E L O IC O 1 2 3 N unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -50µA , IE=0 -210 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1 mA , IB=0 -210 V Emitter-base breakdown voltage V(BR)EBO IE= -50µA, IC=0 -5 V ICBO VCB=-150V, IE=0 Collector cut-off current E Emitter cut-off current J E DC current gain Collector-emitter saturation voltage Transition frequency W Output capacitance IEBO VEB= -4.5 V , IC=0 hFE VCE=-3 V, IC= -5mA VCEsat IC= -2mA, IB= -0.2mA fT VCE=-5V, IC= -2mA Cob VCE=-10V,IE=0,f=1MHz 56 -1 µA -1 µA 270 -0.6 30 V MHz 12 pF CLASSIFICATION OF hFE Rank Range N P Q 56-120 82-180 120-270 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]