WINNERJOIN 2SA821

RoHS
2SA821
2SA821
D
T
,. L
TRANSISTOR (PNP)
TO-92
FEATURES
Power dissipation
1. EMITTER
PCM : 0.25
W (Tamb=25℃)
C
2. COLLECTOR
Collector current
ICM : -0.03 A
Collector-base voltage
V(BR)CBO : -210
V
Operating and storage junction temperature range
3. BASE
TJ, Tstg: -55℃ to +150℃
R
T
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
C
E
L
O
IC
O
1 2 3
N
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -50µA , IE=0
-210
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -0.1 mA , IB=0
-210
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -50µA, IC=0
-5
V
ICBO
VCB=-150V, IE=0
Collector cut-off current
E
Emitter cut-off current
J
E
DC current gain
Collector-emitter saturation voltage
Transition frequency
W
Output capacitance
IEBO
VEB= -4.5 V ,
IC=0
hFE
VCE=-3 V, IC= -5mA
VCEsat
IC= -2mA, IB= -0.2mA
fT
VCE=-5V, IC= -2mA
Cob
VCE=-10V,IE=0,f=1MHz
56
-1
µA
-1
µA
270
-0.6
30
V
MHz
12
pF
CLASSIFICATION OF hFE
Rank
Range
N
P
Q
56-120
82-180
120-270
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