RoHS 3DA752 3DA752 FEATURES Power dissipation 1. BASE PCM: 1.2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter IC Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO C E L Collector cut-off current Emitter cut-off current DC current gain E J E W 2 3 conditions MIN TYP MAX Ic=100µA, IE=0 40 V Ic=10mA, IB=0 30 V IE=1m A, IC=0 5 V VCB=40V, IE=0 0.1 µA IEBO VEB=5V, IC=0 0.1 µA hFE(1) VCE=2V, IC=500mA VCE(sat)1 IC=2A, IB=0.2A 0.8 V VCE(sat)2 IC=1.5A, IB=30mA 2 V fT VCE=5V, IC=500mA 120 MHz Cob VCB=10V, IE=0, f=1MHz 13 pF 100 400 CLASSIFICATION OF hFE(1) Rank Range O Y G 100-200 160-320 200-400 Marking WEJ ELECTRONIC CO. UNIT ICBO Collector-emitter saturation voltage Collector output capacitance O Test R T V(BR)CBO N O unless otherwise specified) Symbol Collector-base breakdown voltage C 1 TJ, Tstg: -55℃ to +150℃ Transition frequency D T ,. L TO-251 TRANSISTOR (NPN) Http:// www.wej.cn E-mail:[email protected]