RoHS 2SD313 2SD313 TRANSISTOR (NPN) D T ,. L TO-220 FEATURES Power dissipation 1. BASE PCM: 2. COLLECTOR 1.75 W (Tamb=25℃) 3. EMITTER Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO O Test R T C E L Collector cut-off current C N unless otherwise specified) Symbol Collector-base breakdown voltage O 123 conditions MIN TYP MAX UNIT Ic=100µA, IE=0 60 V Ic=1mA, IB=0 60 V IE=100µA, IC=0 5 V ICBO VCB=60V, IE=0 100 µA ICEO VCE=60V, IE=0 1 mA IEBO VEB=4V, IC=0 100 µA hFE(1) VCE=2V, IC=1A 40 hFE(2) VCE=2V, IC=0.1A 40 VCE(sat) IC=2A, IB=200mA 1 V Base-emitter voltage VBE VCE=2V, IC=1A 1.5 V Transition frequency fT VCE=5V, IC=500mA 8 MHz Cob VCB=10V, IE=0,f=1MHz 65 pF Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter saturation voltage W Collector output capacitance 320 CLASSIFICATION OF hFE(1) Rank Range C D E F 40-80 60-120 100-200 160-320 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]