RoHS 2SA966 2SA966 D T ,. L TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM : 0.9 2. COLLECTOR W(Tamb=25℃) 3. BASE Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Emitter cut-off current DC current gain E O Test conditions MIN MAX UNIT Ic= -1mA , IE=0 -30 V IC= -10 mA , IB=0 -30 V V(BR)EBO IE= -1mA, IC=0 -5 V ICBO VCB= -30 V , IE=0 -0.1 µA IEBO VEB= -5V , -0.1 µA C E L Collector cut-off current N O unless otherwise specified) R T Collector-base breakdown voltage C 123 IC=0 hFE(1) VCE=-2 V, IC= -500mA VCE(sat) IC= -1.5 A, IB= -0.03A -2 V Base-emitter voltage VBE IC= -500 mA, VCE= -2V -1 V Transition frequency fT VCE= -2 V, IC= -500mA J E Collector-emitter saturation voltage W 100 320 100 MHz CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. O Y 100-200 160-320 Http:// www.wej.cn E-mail:[email protected]