RoHS 2SC2482 2SC2482 D T TO-92MOD TRANSISTOR (NPN) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM: 0.9 W (Tamb=25℃) 3. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage IC N O unless otherwise specified) R T C E L Collector-base breakdown voltage C 123 ,. L O Test conditions MIN MAX UNIT Ic= 100µA , IE=0 300 V IC= 3 mA , IB=0 300 V V(BR)EBO IE= 100µA, IC=0 7 V Collector cut-off current ICBO VCB= 240 V , IE=0 1 µA Collector cut-off current ICEO VCB= 220 V , IB=0 5 µA Emitter cut-off current IEBO 1 µA DC current gain E VEB= 7 V , IC=0 hFE(1) VCE=10 V, IC= 20mA Collector-emitter saturation voltage VCE(sat) IC= 10 mA, IB= 1 mA 1 V Base-emitter saturation voltage VBE(sat) IC= 10 mA, IB= 1 mA 1 V J E W Transition frequency 30 150 VCE= 10 V, IC= 20mA fT 50 MHz f = 30MHz CLASSIFICATION OF hFE(1) Rank Range WEJ ELECTRONIC CO. O Y 30-90 90-150 Http:// www.wej.cn E-mail:[email protected]