RoHS 2SA1013 2SA1013 D T ,. L TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector cut-off current E Emitter cut-off current J E DC current gain Collector-emitter saturation voltage W Base-emitter voltage O Test conditions MIN MAX -160 V IC= -1 mA , IB=0 -160 V V(BR)EBO IE= -10 Μa, IC=0 -6 V ICBO VCB= -150 V, IE=0 -1 µA ICEO VCE= -120 V, IB=0 -10 µA IEBO VEB= -6V, IC=0 -1 µA hFE(1) VCE=-5 V, IC= -200mA 65 hFE(2) VCE=-5V, IC= -50mA 40 VCE(sat) IC= -500 mA, IB= -50 mA -1.5 V VBE IC= -5 mA, VCE= -5V -0.75 V 310 VCE= -5 V, IC= -200mA Transition frequency fT 15 MHz f = 30MHz CLASSIFICATION OF hFE(1) Rank Range UNIT Ic= -100µA , IE=0 C E L Collector cut-off current N O unless otherwise specified) R T Collector-base breakdown voltage C 123 R O Y 60-120 120-200 200-300 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]