RoHS 2SB892 2SB892 D T ,. L TO-92MOD TRANSISTOR (PNP) 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current ICM: -2 A Collector-base voltage V(BR)CBO: -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Emitter cut-off current E N Test conditions MIN MAX UNIT Ic= -10µA , IE=0 -60 V V(BR)CEO IC= -1mA , IB=0 -50 V V(BR)EBO IE=- 100µA, IC=0 -6 V ICBO VCB= -50V , IE=0 -0.1 µA IEBO VEB= -4V , -0.1 µA C E L Collector cut-off current O IC unless otherwise specified) R T Symbol C O 123 IC=0 HFE(1) VCE=-2V, IC= -100mA 100 HFE(2) VCE=-2V, IC= -1.5A 40 Collector-emitter saturation voltage VCE(sat) IC= -1A, IB= -50mA -0.4 V Base-emitter saturation voltage VBE(sat) IC= -1A, IB= -50mA -1.2 V fT VCE= -10 V, IC= -50mA DC current gain J E W Transition frequency 560 150 MHz CLASSIFICATION OF hFE(1) Rank Range R S T U 100-200 140-280 200-400 280-560 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]