To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 ➁ .................................................................. 3A ● VDRM ................................................................. 600V ● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 ● UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➀ 2.6 ± 0.2 ➀➁➂ ● IT (RMS) 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot MAXIMUM RATINGS Symbol VDRM VDSM Voltage class Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 Symbol Parameter Unit 12 600 720 voltage✽1 Conditions IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave 360° conduction, Tc=111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) VGM IGM Tj Tstg Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case V V Ratings 3 Unit 30 A A 3.7 A 2s 3 0.3 6 W W V 0.5 –40 ~ +125 –40 ~ +125 A °C °C 2.0 2000 g V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C ELECTRICAL CHARACTERISTICS Symbol Parameter IDRM VTM Repetitive peak off-state current On-state voltage VFGT ! VRGT ! Gate trigger voltage ✽2 Rth (j-c) Rth (j-a) Tj=125°C, VDRM applied Tc=25°C, ITM=4.5A, Instantaneous measurement Min. — — Typ. — — — — — — — — — — — — 0.2 — — — — — — — ! @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # VRGT # IFGT ! IRGT ! IRGT # VGD Limits Test conditions ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # Gate non-trigger voltage Thermal resistance Thermal resistance Tj=125°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 4.0 50 Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 102 7 5 3 2 40 Tj = 25°C 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM 102 GATE VOLTAGE (V) 7 5 3 2 PGM = 3W 101 7 5 3 VGT 2 PG(AV) = 0.3W IGM = 0.5A 100 7 5 IRGT I 3 2 IFGT I , IRGT III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 100 (%) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 7 5 4 3 2 IFGT I , IRGT I 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 102 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 5.0 4.5 4.0 360° 3.5 CONDUCTION RESISTIVE, 3.0 INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 140 120 CURVES APPLY 100 REGARDLESS OF CONDUCTION 80 ANGLE 60 40 360° 20 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 100 80 60 20 0 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 100 (%) 7 5 7 5 4 3 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) 3 4 5 6 7 8 TYPICAL EXAMPLE 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 TYPICAL EXAMPLE 2 2 3 2 HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 1 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 5 LACHING CURRENT (mA) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 0 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 40 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 120 120 t2.3 100 100 t2.3 60 60 t2.3 120 3 2 DISTRIBUTION 102 T2+, G– TYPICAL EXAMPLE 7 5 3 2 101 7 5 3 + + 2 T2–, G – TYPICAL T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125°C 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) Refer to the page 6 as to the product guaranteed maximum junction temperature 150°C 120 100 III QUADRANT 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6Ω 103 7 5 4 3 6Ω TYPICAL EXAMPLE IRGT III IRGT I A 6V IFGT I 2 102 TEST PROCEDURE 1 7 5 4 3 A 6V RG V V RG TEST PROCEDURE 2 6Ω 2 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (µs) V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM The product guaranteed maximum junction temperature 150°C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR3KM OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 ➁ .................................................................. 3A ● VDRM ................................................................. 600V ● IFGT !, IRGT ! , IRGT # ................... 15mA (10mA) ✽3 ● UL Recognized: Yellow Card No.E80276(N) File No. E80271 ➀ 2.6 ± 0.2 ➀➁➂ ● IT (RMS) 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 ✽ Measurement point of case temperature ➀ T1 TERMINAL ➁ T2 TERMINAL ➂ ➂ GATE TERMINAL TO-220FN APPLICATION Control of heater such as electric rice cooker, electric pot (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol VDRM VDSM Voltage class Parameter Repetitive peak off-state Non-repetitive peak off-state voltage✽1 Symbol Parameter Unit 12 600 720 voltage✽1 Conditions IT (RMS) ITSM RMS on-state current Surge on-state current Commercial frequency, sine full wave 360° conduction, Tc=136°C 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) VGM IGM Tj Tstg Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature — Viso Weight Isolation voltage Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case V V Ratings 3 Unit 30 A A 3.7 A 2s 3 0.3 6 W W V 0.5 –40 ~ +150 –40 ~ +150 A °C °C 2.0 2000 g V ✽1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) ELECTRICAL CHARACTERISTICS Symbol Parameter IDRM VTM Repetitive peak off-state current On-state voltage VFGT ! VRGT ! Gate trigger voltage ✽2 Rth (j-c) Rth (j-a) Tj=150°C, VDRM applied Tc=25°C, ITM=4.5A, Instantaneous measurement ! @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # VRGT # IFGT ! IRGT ! IRGT # VGD Limits Test conditions ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω # Gate non-trigger voltage Thermal resistance Thermal resistance Tj=125°C/150°C, VD=1/2VDRM Junction to case ✽4 Junction to ambient Min. — — Typ. — — — — — — — — — — — — 0.2/0.1 — — — — — — — Max. 2.0 1.5 1.5 1.5 1.5 15 ✽3 15 ✽3 15 ✽3 — 4.0 50 Unit mA V V V V mA mA mA V °C/ W °C/ W ✽2. Measurement using the gate trigger characteristics measurement circuit. ✽3. High sensitivity (IGT≤ 10mA) is also available. (IGT item ➀) ✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 102 40 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 101 7 5 Tj = 150°C 3 2 100 7 5 3 2 10–1 0.5 Tj = 25°C 1.0 1.5 2.0 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 35 30 25 20 15 10 5 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM GATE VOLTAGE (V) 5 3 2 101 7 5 3 VGT 2 100 7 5 3 2 PGM = 3W PG(AV) = 0.3W IGM = 0.5A IRGT I VGD = 0.1V 10–1 7 IFGT I , IRGT III 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) GATE CHARACTERISTICS (Ι, ΙΙ AND ΙΙΙ) 100 (%) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III 102 IFGT I, IRGT I 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (°C/W) GATE TRIGGER VOLTAGE (Tj = t°C) GATE TRIGGER VOLTAGE (Tj = 25°C) 100 (%) GATE CURRENT (mA) 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (°C) 102 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 5.0 4.5 4.0 360° 3.5 CONDUCTION 3.0 RESISTIVE, INDUCTIVE 2.5 LOADS 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM The product guaranteed maximum junction temperature 150°C (See warning.) LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 140 CURVES APPLY 120 REGARDLESS OF CONDUCTION 100 ANGLE 80 60 40 360° 20 CONDUCTION RESISTIVE, INDUCTIVE LOADS 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 AMBIENT TEMPERATURE (°C) CASE TEMPERATURE (°C) 160 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 120 120 t2.3 140 100 100 t2.3 60 60 t2.3 120 80 60 20 0 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 4 5 6 7 8 100 (%) 7 5 3 2 TYPICAL EXAMPLE 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 103 TYPICAL EXAMPLE 102 3 LACHING CURRENT VS. JUNCTION TEMPERATURE 103 2 2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 7 5 4 3 1 106 LACHING CURRENT (mA) HOLDING CURRENT (Tj = t°C) HOLDING CURRENT (Tj = 25°C) 100 (%) RMS ON-STATE CURRENT (A) 0 RMS ON-STATE CURRENT (A) REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C) AMBIENT TEMPERATURE (°C) 80 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 40 RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE 100 LOADS ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 100 7 5 3 2 DISTRIBUTION 102 T2+, G– TYPICAL EXAMPLE 7 5 3 2 101 7 5 3 + + 2 T2–, G – TYPICAL T2 , G EXAMPLE 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Mar. 2002 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR3KM LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE The product guaranteed maximum junction temperature 150°C (See warning.) 100 (%) 160 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 160 TYPICAL EXAMPLE 120 III QUADRANT 100 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE Tj = 150°C 140 120 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) BREAKOVER VOLTAGE (dv/dt = xV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125°C) 140 100 (%) 100 (%) BREAKOVER VOLTAGE (Tj = t°C) BREAKOVER VOLTAGE (Tj = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 III QUADRANT 80 60 I QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) GATE CURRENT PULSE WIDTH (µs) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6Ω 6Ω LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47µF R1 = 47~100Ω C0 R0 C0 = 0.1µF R0 = 100Ω 6Ω A 6V V RG TEST PROCEDURE 3 Mar. 2002